Geometric factors in the magnetoresistance of n-doped InAs epilayers

Handle URI:
http://hdl.handle.net/10754/552524
Title:
Geometric factors in the magnetoresistance of n-doped InAs epilayers
Authors:
Sun, Jian; Soh, Yeong-Ah; Kosel, Jürgen ( 0000-0002-8998-8275 )
Abstract:
We investigate the magnetoresistance (MR) effect in n-doped InAs and InAs/metal hybrid devices with geometries tailored to elucidate the physical mechanism and the role of geometry in the MR. Despite the isotropic Fermi surface in InAs, we observe a strong intrinsic MR in the InAs epilayer due to the existence of a surface conducting layer. Experimental comparison confirms that the extraordinary MR in the InAs/metal hybrids outperforms the orbital MR in the Corbino disk in terms of both the MR ratio and the magnetic field resolution. The results also indicate the advantage of a two-contact configuration in the hybrid devices over a four-contact one with respect to the magnetic field resolution. This is in contrast to previously reported results, where performance was evaluated in terms of the MR ratio and a four-contact configuration was found to be optimal. By applying Kohler's rule, we find that at temperatures above 75 K the extraordinary MR violates Kohler's rule, due to multiple relaxation rates, whereas the orbital MR obeys it. This finding can be used to distinguish the two geometric effects, the extraordinary MR and the orbital MR, from each other.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Geometric factors in the magnetoresistance of n-doped InAs epilayers 2013, 114 (20):203908 Journal of Applied Physics
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
27-Nov-2013
DOI:
10.1063/1.4834518
Type:
Article
ISSN:
00218979
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/114/20/10.1063/1.4834518
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSun, Jianen
dc.contributor.authorSoh, Yeong-Ahen
dc.contributor.authorKosel, Jürgenen
dc.date.accessioned2015-05-10T14:17:29Zen
dc.date.available2015-05-10T14:17:29Zen
dc.date.issued2013-11-27en
dc.identifier.citationGeometric factors in the magnetoresistance of n-doped InAs epilayers 2013, 114 (20):203908 Journal of Applied Physicsen
dc.identifier.issn00218979en
dc.identifier.doi10.1063/1.4834518en
dc.identifier.urihttp://hdl.handle.net/10754/552524en
dc.description.abstractWe investigate the magnetoresistance (MR) effect in n-doped InAs and InAs/metal hybrid devices with geometries tailored to elucidate the physical mechanism and the role of geometry in the MR. Despite the isotropic Fermi surface in InAs, we observe a strong intrinsic MR in the InAs epilayer due to the existence of a surface conducting layer. Experimental comparison confirms that the extraordinary MR in the InAs/metal hybrids outperforms the orbital MR in the Corbino disk in terms of both the MR ratio and the magnetic field resolution. The results also indicate the advantage of a two-contact configuration in the hybrid devices over a four-contact one with respect to the magnetic field resolution. This is in contrast to previously reported results, where performance was evaluated in terms of the MR ratio and a four-contact configuration was found to be optimal. By applying Kohler's rule, we find that at temperatures above 75 K the extraordinary MR violates Kohler's rule, due to multiple relaxation rates, whereas the orbital MR obeys it. This finding can be used to distinguish the two geometric effects, the extraordinary MR and the orbital MR, from each other.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/114/20/10.1063/1.4834518en
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleGeometric factors in the magnetoresistance of n-doped InAs epilayersen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionLondon Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdomen
kaust.authorSun, Jianen
kaust.authorKosel, Jürgenen
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