Non-Planar Nano-Scale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing

Handle URI:
http://hdl.handle.net/10754/552326
Title:
Non-Planar Nano-Scale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing
Authors:
Rojas, Jhonathan Prieto ( 0000-0001-7848-1121 ) ; Sevilla, Galo T. ( 0000-0002-9419-4437 ) ; Alfaraj, Nasir ( 0000-0002-0429-9439 ) ; Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Kutbee, Arwa T.; Sridharan, Ashvitha; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
The ability to incorporate rigid but high-performance nano-scale non-planar complementary metal-oxide semiconductor (CMOS) electronics with curvilinear, irregular, or asymmetric shapes and surfaces is an arduous but timely challenge in enabling the production of wearable electronics with an in-situ information-processing ability in the digital world. Therefore, we are demonstrating a soft-material enabled double-transfer-based process to integrate flexible, silicon-based, nano-scale, non-planar, fin-shaped field effect transistors (FinFETs) and planar metal-oxide-semiconductor field effect transistors (MOSFETs) on various asymmetric surfaces to study their compatibility and enhanced applicability in various emerging fields. FinFET devices feature sub-20 nm dimensions and state-of-the-art, high-κ/metal gate stack, showing no performance alteration after the transfer process. A further analysis of the transferred MOSFET devices, featuring 1 μm gate length exhibits ION ~70 μA/μm (VDS = 2 V, VGS = 2 V) and a low sub-threshold swing of around 90 mV/dec, proving that a soft interfacial material can act both as a strong adhesion/interposing layer between devices and final substrate as well as a means to reduce strain, which ultimately helps maintain the device’s performance with insignificant deterioration even at a high bending state.
KAUST Department:
Integrated Nanotechnology Lab; The KAUST Schools (TKS)
Citation:
Non-Planar Nano-Scale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing 2015:150501111031008 ACS Nano
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
1-May-2015
DOI:
10.1021/acsnano.5b00686
Type:
Article
ISSN:
1936-0851; 1936-086X
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acsnano.5b00686
Appears in Collections:
Articles; Integrated Nanotechnology Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorRojas, Jhonathan Prietoen
dc.contributor.authorSevilla, Galo T.en
dc.contributor.authorAlfaraj, Nasiren
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorKutbee, Arwa T.en
dc.contributor.authorSridharan, Ashvithaen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-05-05T14:48:14Zen
dc.date.available2015-05-05T14:48:14Zen
dc.date.issued2015-05-01en
dc.identifier.citationNon-Planar Nano-Scale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printing 2015:150501111031008 ACS Nanoen
dc.identifier.issn1936-0851en
dc.identifier.issn1936-086Xen
dc.identifier.doi10.1021/acsnano.5b00686en
dc.identifier.urihttp://hdl.handle.net/10754/552326en
dc.description.abstractThe ability to incorporate rigid but high-performance nano-scale non-planar complementary metal-oxide semiconductor (CMOS) electronics with curvilinear, irregular, or asymmetric shapes and surfaces is an arduous but timely challenge in enabling the production of wearable electronics with an in-situ information-processing ability in the digital world. Therefore, we are demonstrating a soft-material enabled double-transfer-based process to integrate flexible, silicon-based, nano-scale, non-planar, fin-shaped field effect transistors (FinFETs) and planar metal-oxide-semiconductor field effect transistors (MOSFETs) on various asymmetric surfaces to study their compatibility and enhanced applicability in various emerging fields. FinFET devices feature sub-20 nm dimensions and state-of-the-art, high-κ/metal gate stack, showing no performance alteration after the transfer process. A further analysis of the transferred MOSFET devices, featuring 1 μm gate length exhibits ION ~70 μA/μm (VDS = 2 V, VGS = 2 V) and a low sub-threshold swing of around 90 mV/dec, proving that a soft interfacial material can act both as a strong adhesion/interposing layer between devices and final substrate as well as a means to reduce strain, which ultimately helps maintain the device’s performance with insignificant deterioration even at a high bending state.en
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acsnano.5b00686en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acsnano.5b00686.en
dc.subjectDouble-transferen
dc.subjectSoft materialen
dc.subjectnon-planaren
dc.subjectFinFETsen
dc.subjectAsymmetric surfaceen
dc.titleNon-Planar Nano-Scale Fin Field Effect Transistors on Textile, Paper, Wood, Stone, and Vinyl via Soft Material-Enabled Double-Transfer Printingen
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentThe KAUST Schools (TKS)en
dc.identifier.journalACS Nanoen
dc.eprint.versionPost-printen
kaust.authorRojas, Jhonathan Prietoen
kaust.authorSevilla, Galo T.en
kaust.authorAlfaraj, Nasiren
kaust.authorGhoneim, Mohamed T.en
kaust.authorKutbee, Arwa T.en
kaust.authorHussain, Muhammad Mustafaen
kaust.authorSridharan, Ashvithaen
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