Electric field engineering using quantum-size-effect-tuned heterojunctions

Handle URI:
http://hdl.handle.net/10754/552324
Title:
Electric field engineering using quantum-size-effect-tuned heterojunctions
Authors:
Adinolfi, V.; Ning, Z.; Xu, J.; Masala, Silvia; Zhitomirsky, D.; Thon, S. M.; Sargent, E. H.
Abstract:
A quantum junction solar cell architecture was recently reported that employs colloidal quantum dots (CQDs) on each side of the p-n junction. This architecture extends the range of design opportunities for CQD photovoltaics, since the bandgap can be tuned across the light-absorbing semiconductor layer via control over CQD size, employing solution-processed, room-temperature fabricated materials. We exploit this feature by designing and demonstrating a field-enhanced heterojunction architecture. We optimize the electric field profile within the solar cell through bandgap engineering, thereby improving carrier collection and achieving an increased open circuit voltage, resulting in a 12% improvement in power conversion efficiency.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center
Citation:
Electric field engineering using quantum-size-effect-tuned heterojunctions 2013, 103 (1):011106 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
3-Jul-2013
DOI:
10.1063/1.4813074
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/103/1/10.1063/1.4813074
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorAdinolfi, V.en
dc.contributor.authorNing, Z.en
dc.contributor.authorXu, J.en
dc.contributor.authorMasala, Silviaen
dc.contributor.authorZhitomirsky, D.en
dc.contributor.authorThon, S. M.en
dc.contributor.authorSargent, E. H.en
dc.date.accessioned2015-05-05T14:47:23Zen
dc.date.available2015-05-05T14:47:23Zen
dc.date.issued2013-07-03en
dc.identifier.citationElectric field engineering using quantum-size-effect-tuned heterojunctions 2013, 103 (1):011106 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4813074en
dc.identifier.urihttp://hdl.handle.net/10754/552324en
dc.description.abstractA quantum junction solar cell architecture was recently reported that employs colloidal quantum dots (CQDs) on each side of the p-n junction. This architecture extends the range of design opportunities for CQD photovoltaics, since the bandgap can be tuned across the light-absorbing semiconductor layer via control over CQD size, employing solution-processed, room-temperature fabricated materials. We exploit this feature by designing and demonstrating a field-enhanced heterojunction architecture. We optimize the electric field profile within the solar cell through bandgap engineering, thereby improving carrier collection and achieving an increased open circuit voltage, resulting in a 12% improvement in power conversion efficiency.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/103/1/10.1063/1.4813074en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleElectric field engineering using quantum-size-effect-tuned heterojunctionsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Centeren
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canadaen
kaust.authorMasala, Silviaen
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