High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

Handle URI:
http://hdl.handle.net/10754/552320
Title:
High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric
Authors:
Nayak, Pradipta K.; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Cha, Dong Kyu; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.
KAUST Department:
Materials Science and Engineering Program; Advanced Nanofabrication, Imaging and Characterization Core Lab
Citation:
High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric 2013, 103 (3):033518 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
18-Jul-2013
DOI:
10.1063/1.4816060
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/103/3/10.1063/1.4816060
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorNayak, Pradipta K.en
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-05-05T14:31:24Zen
dc.date.available2015-05-05T14:31:24Zen
dc.date.issued2013-07-18en
dc.identifier.citationHigh performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric 2013, 103 (3):033518 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4816060en
dc.identifier.urihttp://hdl.handle.net/10754/552320en
dc.description.abstractWe report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/103/3/10.1063/1.4816060en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleHigh performance In2O3 thin film transistors using chemically derived aluminum oxide dielectricen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorNayak, Pradipta K.en
kaust.authorHedhili, Mohamed N.en
kaust.authorCha, Dong Kyuen
kaust.authorAlshareef, Husam N.en
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