Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors

Handle URI:
http://hdl.handle.net/10754/552318
Title:
Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors
Authors:
Caraveo-Frescas, J. A.; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu 2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance.
KAUST Department:
Materials Science and Engineering Program
Citation:
Transparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors 2013, 103 (22):222103 Applied Physics Letters
Journal:
Applied Physics Letters
Issue Date:
25-Nov-2013
DOI:
10.1063/1.4833541
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/103/22/10.1063/1.4833541
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorCaraveo-Frescas, J. A.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-05-05T14:30:32Zen
dc.date.available2015-05-05T14:30:32Zen
dc.date.issued2013-11-25en
dc.identifier.citationTransparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductors 2013, 103 (22):222103 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4833541en
dc.identifier.urihttp://hdl.handle.net/10754/552318en
dc.description.abstractp-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistors exhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnO nanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnO thin film transistors and fifteen times smaller than p-type Cu 2O nanowire transistors. Gate dielectric and process temperature are critical to achieving such performance.en
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/103/22/10.1063/1.4833541en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleTransparent p-type SnO nanowires with unprecedented hole mobility among oxide semiconductorsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorCaraveo-Frescas, Jesus Alfonsoen
kaust.authorAlshareef, Husam N.en
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