Zinc oxide integrated area efficient high output low power wavy channel thin film transistor

Handle URI:
http://hdl.handle.net/10754/552312
Title:
Zinc oxide integrated area efficient high output low power wavy channel thin film transistor
Authors:
Hanna, Amir ( 0000-0003-4679-366X ) ; Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Bahabry, Rabab R. ( 0000-0001-7866-6660 ) ; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
We report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.
KAUST Department:
Integrated Nanotechnology Lab; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Zinc oxide integrated area efficient high output low power wavy channel thin film transistor 2013, 103 (22):224101 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
26-Nov-2013
DOI:
10.1063/1.4836235
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/103/22/10.1063/1.4836235
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHanna, Amiren
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorBahabry, Rabab R.en
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-05-05T14:46:42Zen
dc.date.available2015-05-05T14:46:42Zen
dc.date.issued2013-11-26en
dc.identifier.citationZinc oxide integrated area efficient high output low power wavy channel thin film transistor 2013, 103 (22):224101 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4836235en
dc.identifier.urihttp://hdl.handle.net/10754/552312en
dc.description.abstractWe report an atomic layer deposition based zinc oxide channel material integrated thin film transistor using wavy channel architecture allowing expansion of the transistor width in the vertical direction using the fin type features. The experimental devices show area efficiency, higher normalized output current, and relatively lower power consumption compared to the planar architecture. This performance gain is attributed to the increased device width and an enhanced applied electric field due to the architecture when compared to a back gated planar device with the same process conditions.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/103/22/10.1063/1.4836235en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleZinc oxide integrated area efficient high output low power wavy channel thin film transistoren
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorHanna, Amiren
kaust.authorGhoneim, Mohamed T.en
kaust.authorHussain, Aftab M.en
kaust.authorHussain, Muhammad Mustafaen
kaust.authorBahabry, Rabab R.en
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