Simplistic graphene transfer process and its impact on contact resistance

Handle URI:
http://hdl.handle.net/10754/552306
Title:
Simplistic graphene transfer process and its impact on contact resistance
Authors:
Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Smith, Casey; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Chemical vapor deposition based graphene grown on copper foil is attractive for electronic applications owing to its reliable growth process, large area coverage, and relatively defect free nature. However, transfer of the synthesized graphene to host substrate for subsequent device fabrication is extremely sensitive and can impact ultimate performance. Although ultra-high mobility is graphene's most prominent feature, problems with high contact resistance have severely limited its true potential. Therefore, we report a simple poly-(methyl methacrylate) based transfer process without post-annealing to achieve specific contact resistivity of 3.8 × 10−5 Ω cm2 which shows 80% reduction compared to previously reported values.
KAUST Department:
Integrated Nanotechnology Lab; Electrical Engineering Program
Citation:
Simplistic graphene transfer process and its impact on contact resistance 2013, 102 (18):183115 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
9-May-2013
DOI:
10.1063/1.4804642
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/102/18/10.1063/1.4804642
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorSmith, Caseyen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-05-05T14:37:55Zen
dc.date.available2015-05-05T14:37:55Zen
dc.date.issued2013-05-09en
dc.identifier.citationSimplistic graphene transfer process and its impact on contact resistance 2013, 102 (18):183115 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4804642en
dc.identifier.urihttp://hdl.handle.net/10754/552306en
dc.description.abstractChemical vapor deposition based graphene grown on copper foil is attractive for electronic applications owing to its reliable growth process, large area coverage, and relatively defect free nature. However, transfer of the synthesized graphene to host substrate for subsequent device fabrication is extremely sensitive and can impact ultimate performance. Although ultra-high mobility is graphene's most prominent feature, problems with high contact resistance have severely limited its true potential. Therefore, we report a simple poly-(methyl methacrylate) based transfer process without post-annealing to achieve specific contact resistivity of 3.8 × 10−5 Ω cm2 which shows 80% reduction compared to previously reported values.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/102/18/10.1063/1.4804642en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleSimplistic graphene transfer process and its impact on contact resistanceen
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorGhoneim, Mohamed T.en
kaust.authorSmith, Caseyen
kaust.authorHussain, Muhammad Mustafaen
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