Large negative magnetoresistance in reactive sputtered polycrystalline GdNx films

Handle URI:
http://hdl.handle.net/10754/552304
Title:
Large negative magnetoresistance in reactive sputtered polycrystalline GdNx films
Authors:
Mi, W. B.; Guo, Z. B.; Duan, X. F.; Zhang, X. J.; Bai, H. L.
Abstract:
Polycrystalline ferromagnetic GdN x films were fabricated at different N2 flow rates ( fN2 ) to modify N-vacancy concentration so as to study its influence on electrotransport. Metal-semiconductor transition appears at Curie temperature (TC ) of ∼40 K. Temperature-dependent magnetoresistance (MR) shows a peak at T C. The films at fN2  = 5, 10, 15, and 20 sccm show MR of −38%, −42%, −46%, and −86% at 5 K and 50 kOe, respectively. Above 15 K, MR is from colossal MR and from both colossal and tunneling MR below 15 K. The enhanced MR at fN2  = 20 sccm is attributed to large spin polarization of half-metallicity in GdN x with low N vacancies.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab
Citation:
Large negative magnetoresistance in reactive sputtered polycrystalline GdNx films 2013, 102 (22):222411 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
7-Jun-2013
DOI:
10.1063/1.4810783
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/102/22/10.1063/1.4810783
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorMi, W. B.en
dc.contributor.authorGuo, Z. B.en
dc.contributor.authorDuan, X. F.en
dc.contributor.authorZhang, X. J.en
dc.contributor.authorBai, H. L.en
dc.date.accessioned2015-05-05T14:31:59Zen
dc.date.available2015-05-05T14:31:59Zen
dc.date.issued2013-06-07en
dc.identifier.citationLarge negative magnetoresistance in reactive sputtered polycrystalline GdNx films 2013, 102 (22):222411 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4810783en
dc.identifier.urihttp://hdl.handle.net/10754/552304en
dc.description.abstractPolycrystalline ferromagnetic GdN x films were fabricated at different N2 flow rates ( fN2 ) to modify N-vacancy concentration so as to study its influence on electrotransport. Metal-semiconductor transition appears at Curie temperature (TC ) of ∼40 K. Temperature-dependent magnetoresistance (MR) shows a peak at T C. The films at fN2  = 5, 10, 15, and 20 sccm show MR of −38%, −42%, −46%, and −86% at 5 K and 50 kOe, respectively. Above 15 K, MR is from colossal MR and from both colossal and tunneling MR below 15 K. The enhanced MR at fN2  = 20 sccm is attributed to large spin polarization of half-metallicity in GdN x with low N vacancies.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/102/22/10.1063/1.4810783en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleLarge negative magnetoresistance in reactive sputtered polycrystalline GdNx filmsen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, Chinaen
kaust.authorGuo, Zaibingen
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