In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

Handle URI:
http://hdl.handle.net/10754/552302
Title:
In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition
Authors:
Sarath Kumar, S. R.; Nayak, Pradipta K.; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Khan, M. A.; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
We report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.
KAUST Department:
Materials Science and Engineering Program
Citation:
In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition 2013, 103 (19):192109 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
7-Nov-2013
DOI:
10.1063/1.4829356
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/103/19/10.1063/1.4829356
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorSarath Kumar, S. R.en
dc.contributor.authorNayak, Pradipta K.en
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorKhan, M. A.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-05-05T14:30:01Zen
dc.date.available2015-05-05T14:30:01Zen
dc.date.issued2013-11-07en
dc.identifier.citationIn situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition 2013, 103 (19):192109 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4829356en
dc.identifier.urihttp://hdl.handle.net/10754/552302en
dc.description.abstractWe report the in situ growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/103/19/10.1063/1.4829356en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleIn situ growth of p and n-type graphene thin films and diodes by pulsed laser depositionen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorSarath Kumar, S. R.en
kaust.authorNayak, Pradipta K.en
kaust.authorHedhili, Mohamed N.en
kaust.authorAlshareef, Husam N.en
kaust.authorKhan, Mohammad A.en
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