Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

Handle URI:
http://hdl.handle.net/10754/552270
Title:
Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer
Authors:
Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.
KAUST Department:
Materials Science and Engineering Program
Citation:
Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer 2015, 5:9617 Scientific Reports
Publisher:
Nature Publishing Group
Journal:
Scientific Reports
Issue Date:
20-Apr-2015
DOI:
10.1038/srep09617
PubMed ID:
25892711
PubMed Central ID:
PMC4402970
Type:
Article
ISSN:
2045-2322
Additional Links:
http://www.nature.com/doifinder/10.1038/srep09617
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, Zhenweien
dc.contributor.authorAl-Jawhari, Hala A.en
dc.contributor.authorNayak, Pradipta K.en
dc.contributor.authorCaraveo-Frescas, J. A.en
dc.contributor.authorWei, Ninien
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-05-05T08:52:00Zen
dc.date.available2015-05-05T08:52:00Zen
dc.date.issued2015-04-20en
dc.identifier.citationLow Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer 2015, 5:9617 Scientific Reportsen
dc.identifier.issn2045-2322en
dc.identifier.pmid25892711en
dc.identifier.doi10.1038/srep09617en
dc.identifier.urihttp://hdl.handle.net/10754/552270en
dc.description.abstractIn this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.en
dc.publisherNature Publishing Groupen
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/srep09617en
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.subjectElectronic devicesen
dc.subjectSemiconductorsen
dc.subjectApplied physicsen
dc.titleLow Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layeren
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalScientific Reportsen
dc.identifier.pmcidPMC4402970en
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics, King Abdulaziz University, Jeddah 21589, Saudi Arabiaen
kaust.authorNayak, Pradipta K.en
kaust.authorCaraveo-Frescas, Jesus Alfonsoen
kaust.authorWei, Ninien
kaust.authorHedhili, Mohamed N.en
kaust.authorAlshareef, Husam N.en
kaust.authorWang, Zhenweien

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