Handle URI:
http://hdl.handle.net/10754/552269
Title:
InAs/Si Hetero-Junction Nanotube Tunnel Transistors
Authors:
Hanna, Amir ( 0000-0003-4679-366X ) ; Fahad, Hossain M.; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.
KAUST Department:
Integrated Nanotechnology Lab; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
InAs/Si Hetero-Junction Nanotube Tunnel Transistors 2015, 5:9843 Scientific Reports
Publisher:
Nature Publishing Group
Journal:
Scientific Reports
Issue Date:
29-Apr-2015
DOI:
10.1038/srep09843
PubMed ID:
25923104
PubMed Central ID:
PMC4413881
Type:
Article
ISSN:
2045-2322
Additional Links:
http://www.nature.com/doifinder/10.1038/srep09843
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHanna, Amiren
dc.contributor.authorFahad, Hossain M.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-05-05T08:50:48Zen
dc.date.available2015-05-05T08:50:48Zen
dc.date.issued2015-04-29en
dc.identifier.citationInAs/Si Hetero-Junction Nanotube Tunnel Transistors 2015, 5:9843 Scientific Reportsen
dc.identifier.issn2045-2322en
dc.identifier.pmid25923104en
dc.identifier.doi10.1038/srep09843en
dc.identifier.urihttp://hdl.handle.net/10754/552269en
dc.description.abstractHetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.en
dc.publisherNature Publishing Groupen
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/srep09843en
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.subjectElectrical and electronic engineeringen
dc.subjectElectronic devicesen
dc.subjectElectronic and spintronic devicesen
dc.titleInAs/Si Hetero-Junction Nanotube Tunnel Transistorsen
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalScientific Reportsen
dc.identifier.pmcidPMC4413881en
dc.eprint.versionPublisher's Version/PDFen
kaust.authorFahad, Hossain M.en
kaust.authorHussain, Muhammad Mustafaen
kaust.authorHanna, Amiren

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