Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films

Handle URI:
http://hdl.handle.net/10754/552265
Title:
Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films
Authors:
Abutaha, Anas I. ( 0000-0002-8923-5417 ) ; Sarath Kumar, S. R.; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
We demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.
KAUST Department:
Materials Science and Engineering Program
Citation:
Crystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films 2013, 102 (5):053507 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
6-Feb-2013
DOI:
10.1063/1.4790644
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/102/5/10.1063/1.4790644
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorAbutaha, Anas I.en
dc.contributor.authorSarath Kumar, S. R.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-05-05T08:46:06Zen
dc.date.available2015-05-05T08:46:06Zen
dc.date.issued2013-02-06en
dc.identifier.citationCrystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin films 2013, 102 (5):053507 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4790644en
dc.identifier.urihttp://hdl.handle.net/10754/552265en
dc.description.abstractWe demonstrate that the thermoelectric properties of highly oriented Al-doped zinc oxide (AZO) thin films can be improved by controlling their crystal orientation. The crystal orientation of the AZO films was changed by changing the temperature of the laser deposition process on LaAlO3 (100) substrates. The change in surface termination of the LaAlO3 substrate with temperature induces a change in AZO film orientation. The anisotropic nature of electrical conductivity and Seebeck coefficient of the AZO films showed a favored thermoelectric performance in c-axis oriented films. These films gave the highest power factor of 0.26 W m−1 K−1 at 740 K.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/102/5/10.1063/1.4790644en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleCrystal orientation dependent thermoelectric properties of highly oriented aluminum-doped zinc oxide thin filmsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorAbutaha, Anas I.en
kaust.authorSarath Kumar, S. R.en
kaust.authorAlshareef, Husam N.en
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