Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

Handle URI:
http://hdl.handle.net/10754/552159
Title:
Electroforming-free resistive switching memory effect in transparent p-type tin monoxide
Authors:
Hota, M. K.; Caraveo-Frescas, J. A.; McLachlan, M. A.; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.
KAUST Department:
Materials Science and Engineering Program
Citation:
Electroforming-free resistive switching memory effect in transparent p-type tin monoxide 2014, 104 (15):152104 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
14-Apr-2014
DOI:
10.1063/1.4870405
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/104/15/10.1063/1.4870405
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorHota, M. K.en
dc.contributor.authorCaraveo-Frescas, J. A.en
dc.contributor.authorMcLachlan, M. A.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-05-04T16:10:08Zen
dc.date.available2015-05-04T16:10:08Zen
dc.date.issued2014-04-14en
dc.identifier.citationElectroforming-free resistive switching memory effect in transparent p-type tin monoxide 2014, 104 (15):152104 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4870405en
dc.identifier.urihttp://hdl.handle.net/10754/552159en
dc.description.abstractWe report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/104/15/10.1063/1.4870405en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleElectroforming-free resistive switching memory effect in transparent p-type tin monoxideen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials and Centre for Plastic Electronics, Imperial College London, London SW7 2BP, United Kingdomen
kaust.authorHota, Mrinal Kantien
kaust.authorCaraveo-Frescas, Jesus Alfonsoen
kaust.authorAlshareef, Husam N.en
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