Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

Handle URI:
http://hdl.handle.net/10754/552147
Title:
Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition
Authors:
Xing, G. Z.; Yi, J. B.; Yan, F.; Wu, Tao ( 0000-0003-0845-4827 ) ; Li, S.
Abstract:
We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. © 2014 AIP Publishing LLC.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition 2014, 104 (20):202411 Applied Physics Letters
Journal:
Applied Physics Letters
Issue Date:
23-May-2014
DOI:
10.1063/1.4879463
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/104/20/10.1063/1.4879463
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorXing, G. Z.en
dc.contributor.authorYi, J. B.en
dc.contributor.authorYan, F.en
dc.contributor.authorWu, Taoen
dc.contributor.authorLi, S.en
dc.date.accessioned2015-05-04T16:12:08Zen
dc.date.available2015-05-04T16:12:08Zen
dc.date.issued2014-05-23en
dc.identifier.citationPositive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition 2014, 104 (20):202411 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4879463en
dc.identifier.urihttp://hdl.handle.net/10754/552147en
dc.description.abstractWe report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. © 2014 AIP Publishing LLC.en
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/104/20/10.1063/1.4879463en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titlePositive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser depositionen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionSchool of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052, Australiaen
dc.contributor.institutionSchool of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052, Australiaen
dc.contributor.institutionSchool of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138, United Statesen
dc.contributor.institutionSchool of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052, Australiaen
kaust.authorWu, Taoen
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