G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach

Handle URI:
http://hdl.handle.net/10754/552146
Title:
G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach
Authors:
Wang, H.; Chroneos, A.; Londos, C. A.; Sgourou, E. N.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Electronic structure calculations employing screened hybrid density functional theory are used to gain fundamental insight into the interaction of carbon interstitial (Ci) and substitutional (Cs) atoms forming the CiCs defect known as G-center in silicon (Si). The G-center is one of the most important radiation related defects in Czochralski grown Si. We systematically investigate the density of states and formation energy for different types of CiCs defects with respect to the Fermi energy for all possible charge states. Prevalence of the neutral state for the C-type defect is established.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach 2014, 115 (18):183509 Journal of Applied Physics
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
13-May-2014
DOI:
10.1063/1.4875658
Type:
Article
ISSN:
0021-8979; 1089-7550
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/115/18/10.1063/1.4875658
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, H.en
dc.contributor.authorChroneos, A.en
dc.contributor.authorLondos, C. A.en
dc.contributor.authorSgourou, E. N.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2015-05-04T16:11:34Zen
dc.date.available2015-05-04T16:11:34Zen
dc.date.issued2014-05-13en
dc.identifier.citationG-centers in irradiated silicon revisited: A screened hybrid density functional theory approach 2014, 115 (18):183509 Journal of Applied Physicsen
dc.identifier.issn0021-8979en
dc.identifier.issn1089-7550en
dc.identifier.doi10.1063/1.4875658en
dc.identifier.urihttp://hdl.handle.net/10754/552146en
dc.description.abstractElectronic structure calculations employing screened hybrid density functional theory are used to gain fundamental insight into the interaction of carbon interstitial (Ci) and substitutional (Cs) atoms forming the CiCs defect known as G-center in silicon (Si). The G-center is one of the most important radiation related defects in Czochralski grown Si. We systematically investigate the density of states and formation energy for different types of CiCs defects with respect to the Fermi energy for all possible charge states. Prevalence of the neutral state for the C-type defect is established.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/115/18/10.1063/1.4875658en
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleG-centers in irradiated silicon revisited: A screened hybrid density functional theory approachen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionEngineering and Innovation, The Open University, Milton Keynes MK7 6AA, United Kingdomen
dc.contributor.institutionUniversity of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84, Greeceen
dc.contributor.institutionUniversity of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84, Greeceen
dc.contributor.institutionDepartment of Materials, Imperial College, London SW7 2AZ, United Kingdomen
kaust.authorWang, Haoen
kaust.authorSchwingenschlögl, Udoen
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