Asymmetric electroresistance of cluster glass state in manganites

Handle URI:
http://hdl.handle.net/10754/552144
Title:
Asymmetric electroresistance of cluster glass state in manganites
Authors:
Lourembam, James; Ding, Junfeng; Bera, Ashok ( 0000-0002-5643-5973 ) ; Lin, Weinan; Wu, Tao ( 0000-0003-0845-4827 )
Abstract:
We report the electrostatic modulation of transport in strained Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films grown on SrTiO3 by gating with ionic liquid in electric double layer transistors (EDLT). In such manganite films with strong phase separation, a cluster glass magnetic state emerges at low temperatures with a spin freezing temperature of about 99 K, which is accompanied by the reentrant insulating state with high resistance below 30 K. In the EDLT, we observe bipolar and asymmetric modulation of the channel resistance, as well as an enhanced electroresistance up to 200% at positive gate bias. Our results provide insights on the carrier-density-dependent correlated electron physics of cluster glass systems.
KAUST Department:
Materials Science and Engineering Program
Citation:
Asymmetric electroresistance of cluster glass state in manganites 2014, 104 (13):133508 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
31-Mar-2014
DOI:
10.1063/1.4870480
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/104/13/10.1063/1.4870480
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorLourembam, Jamesen
dc.contributor.authorDing, Junfengen
dc.contributor.authorBera, Ashoken
dc.contributor.authorLin, Weinanen
dc.contributor.authorWu, Taoen
dc.date.accessioned2015-05-04T16:08:26Zen
dc.date.available2015-05-04T16:08:26Zen
dc.date.issued2014-03-31en
dc.identifier.citationAsymmetric electroresistance of cluster glass state in manganites 2014, 104 (13):133508 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4870480en
dc.identifier.urihttp://hdl.handle.net/10754/552144en
dc.description.abstractWe report the electrostatic modulation of transport in strained Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films grown on SrTiO3 by gating with ionic liquid in electric double layer transistors (EDLT). In such manganite films with strong phase separation, a cluster glass magnetic state emerges at low temperatures with a spin freezing temperature of about 99 K, which is accompanied by the reentrant insulating state with high resistance below 30 K. In the EDLT, we observe bipolar and asymmetric modulation of the channel resistance, as well as an enhanced electroresistance up to 200% at positive gate bias. Our results provide insights on the carrier-density-dependent correlated electron physics of cluster glass systems.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/104/13/10.1063/1.4870480en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleAsymmetric electroresistance of cluster glass state in manganitesen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singaporeen
dc.contributor.institutionDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singaporeen
kaust.authorDing, Junfengen
kaust.authorWu, Taoen
kaust.authorKumar, Anup Beraen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.