Band gap tunning in BN-doped graphene systems with high carrier mobility

Handle URI:
http://hdl.handle.net/10754/552143
Title:
Band gap tunning in BN-doped graphene systems with high carrier mobility
Authors:
Kaloni, T. P.; Joshi, R. P.; Adhikari, N. P.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Band gap tunning in BN-doped graphene systems with high carrier mobility 2014, 104 (7):073116 Applied Physics Letters
Journal:
Applied Physics Letters
Issue Date:
17-Feb-2014
DOI:
10.1063/1.4866383
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/104/7/10.1063/1.4866383; http://arxiv.org/abs/1402.0122
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKaloni, T. P.en
dc.contributor.authorJoshi, R. P.en
dc.contributor.authorAdhikari, N. P.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2015-05-04T16:07:58Zen
dc.date.available2015-05-04T16:07:58Zen
dc.date.issued2014-02-17en
dc.identifier.citationBand gap tunning in BN-doped graphene systems with high carrier mobility 2014, 104 (7):073116 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4866383en
dc.identifier.urihttp://hdl.handle.net/10754/552143en
dc.description.abstractUsing density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers.en
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/104/7/10.1063/1.4866383en
dc.relation.urlhttp://arxiv.org/abs/1402.0122en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleBand gap tunning in BN-doped graphene systems with high carrier mobilityen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionCentral Department of Physics, Tribhuvan University, Kirtipur, Kathmandu, Nepalen
dc.contributor.institutionCentral Department of Physics, Tribhuvan University, Kirtipur, Kathmandu, Nepalen
dc.identifier.arxividarXiv:1402.0122en
kaust.authorKaloni, Thaneshwor P.en
kaust.authorSchwingenschlögl, Udoen
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