Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure

Handle URI:
http://hdl.handle.net/10754/552118
Title:
Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure
Authors:
Zhao, Ying-Ying; Wang, Jing; Kuang, Hao; Hu, Feng-Xia; Liu, Yao; Wu, Rong-Rong; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Sun, Ji-Rong; Shen, Bao-Gen
Abstract:
Memory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezostrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane anisotropic strain field during the cooling process from room temperature, we observe an in-plane anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the anisotropic strain field. In addition, we find that the anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the anisotropic strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Anisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure 2015, 5:9668 Scientific Reports
Journal:
Scientific Reports
Issue Date:
24-Apr-2015
DOI:
10.1038/srep09668
Type:
Article
ISSN:
2045-2322
Additional Links:
http://www.nature.com/doifinder/10.1038/srep09668
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZhao, Ying-Yingen
dc.contributor.authorWang, Jingen
dc.contributor.authorKuang, Haoen
dc.contributor.authorHu, Feng-Xiaen
dc.contributor.authorLiu, Yaoen
dc.contributor.authorWu, Rong-Rongen
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorSun, Ji-Rongen
dc.contributor.authorShen, Bao-Genen
dc.date.accessioned2015-05-03T13:31:01Zen
dc.date.available2015-05-03T13:31:01Zen
dc.date.issued2015-04-24en
dc.identifier.citationAnisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructure 2015, 5:9668 Scientific Reportsen
dc.identifier.issn2045-2322en
dc.identifier.doi10.1038/srep09668en
dc.identifier.urihttp://hdl.handle.net/10754/552118en
dc.description.abstractMemory effect of electric-field control on magnetic behavior in magnetoelectric composite heterostructures has been a topic of interest for a long time. Although the piezostrain and its transfer across the interface of ferroelectric/ferromagnetic films are known to be important in realizing magnetoelectric coupling, the underlying mechanism for nonvolatile modulation of magnetic behaviors remains a challenge. Here, we report on the electric-field control of magnetic properties in wide-band (011)-Pr0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 heterostructures. By introducing an electric-field-induced in-plane anisotropic strain field during the cooling process from room temperature, we observe an in-plane anisotropic, nonvolatile modulation of magnetic properties in a wide-band Pr0.7Sr0.3MnO3 film at low temperatures. We attribute this anisotropic memory effect to the preferential seeding and growth of ferromagnetic (FM) domains under the anisotropic strain field. In addition, we find that the anisotropic, nonvolatile modulation of magnetic properties gradually diminishes as the temperature approaches FM transition, indicating that the nonvolatile memory effect is temperature dependent. By taking into account the competition between thermal energy and the potential barrier of the metastable magnetic state induced by the anisotropic strain field, this distinct memory effect is well explained, which provides a promising approach for designing novel electric-writing magnetic memories.en
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/srep09668en
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.subjectFerroelectrics and multiferroicsen
dc.subjectMagnetic properties and materialsen
dc.titleAnisotropic modulation of magnetic properties and the memory effect in a wide-band (011)-Pr0.7Sr0.3MnO3/PMN-PT heterostructureen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalScientific Reportsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionBeijing National Laboratory for Condensed Matter Physics and the State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. Chinaen
kaust.authorZhang, Xixiangen
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