Synthesis and Characterization of Pb(Zr𝟎.πŸ“πŸ‘, Ti𝟎.πŸ’πŸ•)OπŸ‘-Pb(Nb𝟏/πŸ‘, Zn𝟐/πŸ‘)OπŸ‘ Thin Film Cantilevers for Energy Harvesting Applications

Handle URI:
http://hdl.handle.net/10754/550846
Title:
Synthesis and Characterization of Pb(Zr𝟎.πŸ“πŸ‘, Ti𝟎.πŸ’πŸ•)OπŸ‘-Pb(Nb𝟏/πŸ‘, Zn𝟐/πŸ‘)OπŸ‘ Thin Film Cantilevers for Energy Harvesting Applications
Authors:
Fuentes-Fernandez, E. M. A. ( 0000-0003-1940-0779 ) ; Debray-Mechtaly, W.; Quevedo-Lopez, M. A.; Gnade, B.; Leon-Salguero, E. ( 0000-0002-9088-4334 ) ; Shah, P.; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
A complete analysis of the morphology, crystallographic orientation, and resulting electrical properties of Pb(Zr0.53,Ti0.47) Pb(Nb1/3, Zn2/3)O3 (PZT-PZN) thin films, as well as the electrical behavior when integrated in a cantilever for energy harvesting applications, is presented. The PZT-PZN films were deposited using sol-gel methods. We report that using 20% excess Pb, a nucleation layer of PbTiO3 (PT), and a fast ramp rate provides large grains, as well as denser films. The PZT-PZN is deposited on a stack of TiO2/PECVD SiO2/Si3N4/thermal SiO2/Poly-Si/Si. This stack is designed to allow wet-etching the poly-Si layer to release the cantilever structures. It was also found that the introduction of the poly-Si layer results in larger grains in the PZT-PZN film. PZT-PZN films with a dielectric constant of 3200 and maximum polarization of 30 μC/cm2 were obtained. The fabricated cantilever devices produced ~300–400 mV peak-to-peak depending on the cantilever design. Experimental results are compared with simulations.
KAUST Department:
Materials Science and Engineering Program
Citation:
Synthesis and Characterization of Pb(Zr𝟎.πŸ“πŸ‘, Ti𝟎.πŸ’πŸ•)OπŸ‘-Pb(Nb𝟏/πŸ‘, Zn𝟐/πŸ‘)OπŸ‘ Thin Film Cantilevers for Energy Harvesting Applications 2012, 2012:1 Smart Materials Research
Publisher:
Hindawi Publishing Corporation
Journal:
Smart Materials Research
Issue Date:
18-Jan-2012
DOI:
10.1155/2012/872439
Type:
Article
ISSN:
2090-3561; 2090-357X
Additional Links:
http://www.hindawi.com/journals/smr/2012/872439/
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorFuentes-Fernandez, E. M. A.en
dc.contributor.authorDebray-Mechtaly, W.en
dc.contributor.authorQuevedo-Lopez, M. A.en
dc.contributor.authorGnade, B.en
dc.contributor.authorLeon-Salguero, E.en
dc.contributor.authorShah, P.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-04-28T12:39:08Zen
dc.date.available2015-04-28T12:39:08Zen
dc.date.issued2012-01-18en
dc.identifier.citationSynthesis and Characterization of Pb(Zr𝟎.πŸ“πŸ‘, Ti𝟎.πŸ’πŸ•)OπŸ‘-Pb(Nb𝟏/πŸ‘, Zn𝟐/πŸ‘)OπŸ‘ Thin Film Cantilevers for Energy Harvesting Applications 2012, 2012:1 Smart Materials Researchen
dc.identifier.issn2090-3561en
dc.identifier.issn2090-357Xen
dc.identifier.doi10.1155/2012/872439en
dc.identifier.urihttp://hdl.handle.net/10754/550846en
dc.description.abstractA complete analysis of the morphology, crystallographic orientation, and resulting electrical properties of Pb(Zr0.53,Ti0.47) Pb(Nb1/3, Zn2/3)O3 (PZT-PZN) thin films, as well as the electrical behavior when integrated in a cantilever for energy harvesting applications, is presented. The PZT-PZN films were deposited using sol-gel methods. We report that using 20% excess Pb, a nucleation layer of PbTiO3 (PT), and a fast ramp rate provides large grains, as well as denser films. The PZT-PZN is deposited on a stack of TiO2/PECVD SiO2/Si3N4/thermal SiO2/Poly-Si/Si. This stack is designed to allow wet-etching the poly-Si layer to release the cantilever structures. It was also found that the introduction of the poly-Si layer results in larger grains in the PZT-PZN film. PZT-PZN films with a dielectric constant of 3200 and maximum polarization of 30 μC/cm2 were obtained. The fabricated cantilever devices produced ~300–400 mV peak-to-peak depending on the cantilever design. Experimental results are compared with simulations.en
dc.publisherHindawi Publishing Corporationen
dc.relation.urlhttp://www.hindawi.com/journals/smr/2012/872439/en
dc.rightsThis is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.en
dc.titleSynthesis and Characterization of Pb(Zr𝟎.πŸ“πŸ‘, Ti𝟎.πŸ’πŸ•)OπŸ‘-Pb(Nb𝟏/πŸ‘, Zn𝟐/πŸ‘)OπŸ‘ Thin Film Cantilevers for Energy Harvesting Applicationsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalSmart Materials Researchen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, 800 W. Campbell Road, Richardson, TX 75080, USAen
dc.contributor.institutionDepartment of Materials Science, Research Center for Advanced Materials, 120 Avenue Miguel de Cervantes, Chihuahua 31109, CHIH, Mexicoen
dc.contributor.institutionMaterials Science, Texas MicroPower Inc., 7920 Beltline Road, Suite 1005, Dallas, TX 75254, USAen
kaust.authorAlshareef, Husam N.en
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