The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO

Handle URI:
http://hdl.handle.net/10754/550506
Title:
The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO
Authors:
Wang, H. H.; Tian, J. S.; Chen, C. Y.; Huang, H. H.; Yeh, Y. C.; Deng, P. Y.; Chang, L.; Chu, Y. H.; Wu, Y. R.; He, Jr-Hau ( 0000-0003-1886-9241 )
Abstract:
The near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112̅0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO 2015, 7 (2):1 IEEE Photonics Journal
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Photonics Journal
Issue Date:
20-Mar-2015
DOI:
10.1109/JPHOT.2015.2415672
Type:
Article
ISSN:
1943-0655
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7064700
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, H. H.en
dc.contributor.authorTian, J. S.en
dc.contributor.authorChen, C. Y.en
dc.contributor.authorHuang, H. H.en
dc.contributor.authorYeh, Y. C.en
dc.contributor.authorDeng, P. Y.en
dc.contributor.authorChang, L.en
dc.contributor.authorChu, Y. H.en
dc.contributor.authorWu, Y. R.en
dc.contributor.authorHe, Jr-Hauen
dc.date.accessioned2015-04-23T13:49:37Zen
dc.date.available2015-04-23T13:49:37Zen
dc.date.issued2015-03-20en
dc.identifier.citationThe Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO 2015, 7 (2):1 IEEE Photonics Journalen
dc.identifier.issn1943-0655en
dc.identifier.doi10.1109/JPHOT.2015.2415672en
dc.identifier.urihttp://hdl.handle.net/10754/550506en
dc.description.abstractThe near band edge emission of the tensile-strained m-plane ZnO film grown on (112)LaAlO3 substrates shows abnormal low polarization degree (ρ = 0.1). The temperature dependency of polarization degree clarifies the origins of different emission peaks. In tensile-strained m-plane ZnO, the [0001] polarized state is upper shifted and is overlapping with the [112̅0] polarized state. This phenomenon causes the abnormal low polarization degree and reveals the effect of strain on the emission anisotropy of m-plane ZnO.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7064700en
dc.rights(c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.en
dc.subjectII-VI semiconductor materialsen
dc.subjectOptical filmsen
dc.subjectoptical polarizationen
dc.subjectphotoluminescenceen
dc.subjectstrainen
dc.titleThe Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnOen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalIEEE Photonics Journalen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwanen
dc.contributor.institutionInstitute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwanen
kaust.authorWang, H. H.en
kaust.authorChen, C. Y.en
kaust.authorHe, Jr-Hauen
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