Enhanced thermoelectric figure of merit in strained Tl-doped Bi2Se3

Handle URI:
http://hdl.handle.net/10754/550088
Title:
Enhanced thermoelectric figure of merit in strained Tl-doped Bi2Se3
Authors:
Saeed, Y.; Singh, Nirpendra ( 0000-0001-8043-0403 ) ; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
We explain recent experimental findings on Tl-doped Bi2Se3 by determining the electronic and transport properties by first-principles calculations and semi-classical Boltzmann theory. Though Tl-doping introduces a momentum-dependent spin-orbit splitting, the effective mass of the carriers is essentially not modified, while the band gap is reduced. Tl is found to be exceptional in this respect as other dopants modify the dispersion, which compromises thermoelectricity. Moreover, we demonstrate that only after Tl-doping strain becomes an efficient tool for enhancing the thermoelectric performance. A high figure of merit of 0.86 is obtained for strong p-doping (7 × 10^20 cm^(−3), maximal power factor) at 500 K under 2% tensile strain.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Enhanced thermoelectric figure of merit in strained Tl-doped Bi2Se3 2014, 105 (3):031915 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
21-Jul-2014
DOI:
10.1063/1.4890858
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/105/3/10.1063/1.4890858
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSaeed, Y.en
dc.contributor.authorSingh, Nirpendraen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2015-04-14T12:50:40Zen
dc.date.available2015-04-14T12:50:40Zen
dc.date.issued2014-07-21en
dc.identifier.citationEnhanced thermoelectric figure of merit in strained Tl-doped Bi2Se3 2014, 105 (3):031915 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4890858en
dc.identifier.urihttp://hdl.handle.net/10754/550088en
dc.description.abstractWe explain recent experimental findings on Tl-doped Bi2Se3 by determining the electronic and transport properties by first-principles calculations and semi-classical Boltzmann theory. Though Tl-doping introduces a momentum-dependent spin-orbit splitting, the effective mass of the carriers is essentially not modified, while the band gap is reduced. Tl is found to be exceptional in this respect as other dopants modify the dispersion, which compromises thermoelectricity. Moreover, we demonstrate that only after Tl-doping strain becomes an efficient tool for enhancing the thermoelectric performance. A high figure of merit of 0.86 is obtained for strong p-doping (7 × 10^20 cm^(−3), maximal power factor) at 500 K under 2% tensile strain.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/105/3/10.1063/1.4890858en
dc.rightsArchived with thanks to Applied Physics Letters. © 2014 AIP Publishing LLCen
dc.titleEnhanced thermoelectric figure of merit in strained Tl-doped Bi2Se3en
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorSaeed, Yasiren
kaust.authorSingh, Nirpendraen
kaust.authorSchwingenschlögl, Udoen
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