On the impact of indium distribution on the electronic properties in InGaN nanodisks

Handle URI:
http://hdl.handle.net/10754/346995
Title:
On the impact of indium distribution on the electronic properties in InGaN nanodisks
Authors:
Benaissa, M.; Sigle, W.; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; El Bouayadi, R.; van Aken, P. A.; Jahangir, S.; Bhattacharya, P.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We analyze an epitaxially grown heterostructure composed of InGaN nanodisks inserted in GaN nanowires in order to relate indium concentration to the electronic properties. This study was achieved with spatially resolved low-loss electron energy-loss spectroscopy using monochromated electrons to probe optical excitations - plasmons - at nanometer scale. Our findings show that each nanowire has its own indium fluctuation and therefore its own average composition. Due to this indium distribution, a scatter is obtained in plasmon energies, and therefore in the optical dielectric function, of the nanowire ensemble. We suppose that these inhomogeneous electronic properties significantly alter band-to-band transitions and consequently induce emission broadening. In addition, the observation of tailing indium composition into the GaN barrier suggests a graded well-barrier interface leading to further inhomogeneous broadening of the electro-optical properties. An improvement in the indium incorporation during growth is therefore needed to narrow the emission linewidth of the presently studied heterostructures.
KAUST Department:
Photonics Laboratory
Citation:
On the impact of indium distribution on the electronic properties in InGaN nanodisks 2015, 106 (10):101910 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
9-Mar-2015
DOI:
10.1063/1.4915117
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/106/10/10.1063/1.4915117
Appears in Collections:
Articles; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorBenaissa, M.en
dc.contributor.authorSigle, W.en
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorEl Bouayadi, R.en
dc.contributor.authorvan Aken, P. A.en
dc.contributor.authorJahangir, S.en
dc.contributor.authorBhattacharya, P.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-03-23T08:18:39Zen
dc.date.available2015-03-23T08:18:39Zen
dc.date.issued2015-03-09en
dc.identifier.citationOn the impact of indium distribution on the electronic properties in InGaN nanodisks 2015, 106 (10):101910 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4915117en
dc.identifier.urihttp://hdl.handle.net/10754/346995en
dc.description.abstractWe analyze an epitaxially grown heterostructure composed of InGaN nanodisks inserted in GaN nanowires in order to relate indium concentration to the electronic properties. This study was achieved with spatially resolved low-loss electron energy-loss spectroscopy using monochromated electrons to probe optical excitations - plasmons - at nanometer scale. Our findings show that each nanowire has its own indium fluctuation and therefore its own average composition. Due to this indium distribution, a scatter is obtained in plasmon energies, and therefore in the optical dielectric function, of the nanowire ensemble. We suppose that these inhomogeneous electronic properties significantly alter band-to-band transitions and consequently induce emission broadening. In addition, the observation of tailing indium composition into the GaN barrier suggests a graded well-barrier interface leading to further inhomogeneous broadening of the electro-optical properties. An improvement in the indium incorporation during growth is therefore needed to narrow the emission linewidth of the presently studied heterostructures.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/106/10/10.1063/1.4915117en
dc.rightsCopyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.titleOn the impact of indium distribution on the electronic properties in InGaN nanodisksen
dc.typeArticleen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionLMPHE, Physics Department, Faculté des Sciences, Université Mohammed V, 4 Avenue Ibn Batouta, B.P. 1014 RP, 10000 Rabat, Moroccoen
dc.contributor.institutionMax Planck Institute for Intelligent Systems, Heisenbergstraße 3, 70569 Stuttgart, Germanyen
dc.contributor.institutionLPMR, Université Mohammed Premier, B.P. 717, 60000 Oujda, Moroccoen
dc.contributor.institutionMax Planck Institute for Intelligent Systems, Heisenbergstraße 3, 70569 Stuttgart, Germanyen
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USAen
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USAen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorOoi, Boon S.en
kaust.authorNg, Tien Kheeen
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