Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

Handle URI:
http://hdl.handle.net/10754/346982
Title:
Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon
Authors:
Li, Jingqi; Yue, Weisheng; Guo, Zaibing; Yang, Yang; Wang, Xianbin; Syed, Ahad A.; Zhang, Yafei
Abstract:
A vertical carbon nanotube field-effect transistor (CNTFET) based on silicon (Si) substrate has been proposed and simulated using a semi-classical theory. A single-walled carbon nanotube (SWNT) and an n-type Si nanowire in series construct the channel of the transistor. The CNTFET presents ambipolar characteristics at positive drain voltage (Vd) and n-type characteristics at negative Vd. The current is significantly influenced by the doping level of n-Si and the SWNT band gap. The n-branch current of the ambipolar characteristics increases with increasing doping level of the n-Si while the p-branch current decreases. The SWNT band gap has the same influence on the p-branch current at a positive Vd and n-type characteristics at negative Vd. The lower the SWNT band gap, the higher the current. However, it has no impact on the n-branch current in the ambipolar characteristics. Thick oxide is found to significantly degrade the current and the subthreshold slope of the CNTFETs.
KAUST Department:
Advanced Nanofabrication and Thin Film Core Lab
Citation:
Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon 2014, 6 (3):287 Nano-Micro Letters
Publisher:
Open Access House of Science and Technology
Journal:
Nano-Micro Letters
Issue Date:
1-Jul-2014
DOI:
10.1007/BF03353793
Type:
Article
ISSN:
2311-6706; 2150-5551
Additional Links:
http://link.springer.com/10.1007/BF03353793
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Jingqien
dc.contributor.authorYue, Weishengen
dc.contributor.authorGuo, Zaibingen
dc.contributor.authorYang, Yangen
dc.contributor.authorWang, Xianbinen
dc.contributor.authorSyed, Ahad A.en
dc.contributor.authorZhang, Yafeien
dc.date.accessioned2015-03-23T08:19:59Zen
dc.date.available2015-03-23T08:19:59Zen
dc.date.issued2014-07-01en
dc.identifier.citationUnique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon 2014, 6 (3):287 Nano-Micro Lettersen
dc.identifier.issn2311-6706en
dc.identifier.issn2150-5551en
dc.identifier.doi10.1007/BF03353793en
dc.identifier.urihttp://hdl.handle.net/10754/346982en
dc.description.abstractA vertical carbon nanotube field-effect transistor (CNTFET) based on silicon (Si) substrate has been proposed and simulated using a semi-classical theory. A single-walled carbon nanotube (SWNT) and an n-type Si nanowire in series construct the channel of the transistor. The CNTFET presents ambipolar characteristics at positive drain voltage (Vd) and n-type characteristics at negative Vd. The current is significantly influenced by the doping level of n-Si and the SWNT band gap. The n-branch current of the ambipolar characteristics increases with increasing doping level of the n-Si while the p-branch current decreases. The SWNT band gap has the same influence on the p-branch current at a positive Vd and n-type characteristics at negative Vd. The lower the SWNT band gap, the higher the current. However, it has no impact on the n-branch current in the ambipolar characteristics. Thick oxide is found to significantly degrade the current and the subthreshold slope of the CNTFETs.en
dc.publisherOpen Access House of Science and Technologyen
dc.relation.urlhttp://link.springer.com/10.1007/BF03353793en
dc.rightsArchived with thanks to Nano-Micro Lettersen
dc.titleUnique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Siliconen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication and Thin Film Core Laben
dc.identifier.journalNano-Micro Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionKey Laboratory for Thin Film and Microfabrication Technology of the Ministry of Education, School of Electronics, Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P.R. Chinaen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorLi, Jingqien
kaust.authorYue, Weishengen
kaust.authorGuo, Zaibingen
kaust.authorYang, Yangen
kaust.authorWang, Xianbinen
kaust.authorSyed, Ahad A.en
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