Effect of ultraviolet illumination on metal oxide resistive memory

Handle URI:
http://hdl.handle.net/10754/346977
Title:
Effect of ultraviolet illumination on metal oxide resistive memory
Authors:
Duran Retamal, Jose Ramon; Kang, Chen-Fang; Ho, Chih-Hsiang; Ke, Jr-Jian; Chang, Wen-Yuan; He, Jr-Hau ( 0000-0003-1886-9241 )
Abstract:
We investigate the photoelectrical and resistive switching properties of Pt/ZnO/Pt capacitor operated in unipolar mode under ultraviolet (UV) illumination. The oxygen photodesorption under UV illumination explains the photoconduction observed in initial and high resistance states. Meanwhile, oxygen readsorption at surface-related defects justifies the different photoresponses dynamics in both states. Finally, UV illumination significantly reduces the variations of resistance in high resistance state, set voltage and reset voltage by 58%, 33%, and 25%, respectively, stabilizing Pt/ZnO/Pt capacitor. Our findings in improved switching uniformity via UV light give physical insight into designing resistive memory devices.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Effect of ultraviolet illumination on metal oxide resistive memory 2014, 105 (25):253111 Applied Physics Letters
Publisher:
American Institute of Physics
Journal:
Applied Physics Letters
Issue Date:
22-Dec-2014
DOI:
10.1063/1.4904396
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/105/25/10.1063/1.4904396
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorDuran Retamal, Jose Ramonen
dc.contributor.authorKang, Chen-Fangen
dc.contributor.authorHo, Chih-Hsiangen
dc.contributor.authorKe, Jr-Jianen
dc.contributor.authorChang, Wen-Yuanen
dc.contributor.authorHe, Jr-Hauen
dc.date.accessioned2015-03-23T08:08:04Zen
dc.date.available2015-03-23T08:08:04Zen
dc.date.issued2014-12-22en
dc.identifier.citationEffect of ultraviolet illumination on metal oxide resistive memory 2014, 105 (25):253111 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4904396en
dc.identifier.urihttp://hdl.handle.net/10754/346977en
dc.description.abstractWe investigate the photoelectrical and resistive switching properties of Pt/ZnO/Pt capacitor operated in unipolar mode under ultraviolet (UV) illumination. The oxygen photodesorption under UV illumination explains the photoconduction observed in initial and high resistance states. Meanwhile, oxygen readsorption at surface-related defects justifies the different photoresponses dynamics in both states. Finally, UV illumination significantly reduces the variations of resistance in high resistance state, set voltage and reset voltage by 58%, 33%, and 25%, respectively, stabilizing Pt/ZnO/Pt capacitor. Our findings in improved switching uniformity via UV light give physical insight into designing resistive memory devices.en
dc.publisherAmerican Institute of Physicsen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/105/25/10.1063/1.4904396en
dc.rightsThis article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: http://scitation.aip.org/termsconditions.en
dc.titleEffect of ultraviolet illumination on metal oxide resistive memoryen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USAen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorHe, Jr-Hauen
kaust.authorDuran Retamal, Jose Ramonen
kaust.authorKang, Chenfangen
kaust.authorKe, Jrjianen
kaust.authorChang, Wenyuanen
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