Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

Handle URI:
http://hdl.handle.net/10754/346974
Title:
Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)
Authors:
Yin, Y. W.; Raju, M.; Hu, W. J.; Burton, J. D.; Kim, Y.-M.; Borisevich, A. Y.; Pennycook, S. J.; Yang, S. M.; Noh, T. W.; Gruverman, A.; Li, X. G.; Zhang, Z. D.; Tsymbal, E. Y.; Li, Qi
Abstract:
As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO3/manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La0.7Sr0.3MnO3/BaTiO3/La0.5Ca0.5MnO3 /La0.7Sr0.3MnO3 MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO3 is ferroelectric and La0.5Ca0.5MnO3 is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited) 2015, 117 (17):172601 Journal of Applied Physics
Publisher:
American Institute of Physics
Journal:
Journal of Applied Physics
Issue Date:
3-Mar-2015
DOI:
10.1063/1.4913753
Type:
Article
ISSN:
0021-8979; 1089-7550
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/117/17/10.1063/1.4913753
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorYin, Y. W.en
dc.contributor.authorRaju, M.en
dc.contributor.authorHu, W. J.en
dc.contributor.authorBurton, J. D.en
dc.contributor.authorKim, Y.-M.en
dc.contributor.authorBorisevich, A. Y.en
dc.contributor.authorPennycook, S. J.en
dc.contributor.authorYang, S. M.en
dc.contributor.authorNoh, T. W.en
dc.contributor.authorGruverman, A.en
dc.contributor.authorLi, X. G.en
dc.contributor.authorZhang, Z. D.en
dc.contributor.authorTsymbal, E. Y.en
dc.contributor.authorLi, Qien
dc.date.accessioned2015-03-23T08:18:22Zen
dc.date.available2015-03-23T08:18:22Zen
dc.date.issued2015-03-03en
dc.identifier.citationMultiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited) 2015, 117 (17):172601 Journal of Applied Physicsen
dc.identifier.issn0021-8979en
dc.identifier.issn1089-7550en
dc.identifier.doi10.1063/1.4913753en
dc.identifier.urihttp://hdl.handle.net/10754/346974en
dc.description.abstractAs semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO3/manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La0.7Sr0.3MnO3/BaTiO3/La0.5Ca0.5MnO3 /La0.7Sr0.3MnO3 MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO3 is ferroelectric and La0.5Ca0.5MnO3 is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface.en
dc.publisherAmerican Institute of Physicsen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/117/17/10.1063/1.4913753en
dc.rightsCopyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.titleMultiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)en
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, USAen
dc.contributor.institutionDepartment of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, USAen
dc.contributor.institutionDepartment of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, USAen
dc.contributor.institutionMaterials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USAen
dc.contributor.institutionMaterials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USAen
dc.contributor.institutionMaterials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USAen
dc.contributor.institutionIBS-Center for Functional Interfaces of Correlated Electron Systems, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, South Koreaen
dc.contributor.institutionIBS-Center for Functional Interfaces of Correlated Electron Systems, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, South Koreaen
dc.contributor.institutionDepartment of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, USAen
dc.contributor.institutionHefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026, People's Republic of Chinaen
dc.contributor.institutionShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, Chinaen
dc.contributor.institutionDepartment of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, USAen
dc.contributor.institutionDepartment of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, USAen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
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