Highly stable thin film transistors using multilayer channel structure

Handle URI:
http://hdl.handle.net/10754/346973
Title:
Highly stable thin film transistors using multilayer channel structure
Authors:
Nayak, Pradipta K.; Wang, Zhenwei; Anjum, Dalaver H.; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.
KAUST Department:
Materials Science and Engineering Program
Citation:
Highly stable thin film transistors using multilayer channel structure 2015, 106 (10):103505 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
9-Mar-2015
DOI:
10.1063/1.4914971
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/106/10/10.1063/1.4914971
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorNayak, Pradipta K.en
dc.contributor.authorWang, Zhenweien
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-03-23T08:16:17Zen
dc.date.available2015-03-23T08:16:17Zen
dc.date.issued2015-03-09en
dc.identifier.citationHighly stable thin film transistors using multilayer channel structure 2015, 106 (10):103505 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4914971en
dc.identifier.urihttp://hdl.handle.net/10754/346973en
dc.description.abstractWe report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/106/10/10.1063/1.4914971en
dc.rightsCopyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.en
dc.titleHighly stable thin film transistors using multilayer channel structureen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorNayak, Pradipta K.en
kaust.authorAnjum, Dalaver H.en
kaust.authorHedhili, Mohamed N.en
kaust.authorAlshareef, Husam N.en
kaust.authorWang, Zhenweien
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