Bandgap tunability at single-layer molybdenum disulphide grain boundaries

Handle URI:
http://hdl.handle.net/10754/346778
Title:
Bandgap tunability at single-layer molybdenum disulphide grain boundaries
Authors:
Huang, Yu Li; Chen, Yifeng; Zhang, Wenjing; Quek, Su Ying; Chen, Chang-Hsiao; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Hsu, Wei-Ting; Chang, Wen-Hao; Zheng, Yu Jie; Chen, Wei; Wee, Andrew T. S.
Abstract:
Two-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties of interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle energy gap to be 2.40±0.05 eV for single-layer, 2.10±0.05 eV for bilayer and 1.75±0.05 eV for trilayer molybdenum disulphide, which were directly grown on a graphite substrate by chemical vapour deposition method. More interestingly, we report an unexpected bandgap tunability (as large as 0.85±0.05 eV) with distance from the grain boundary in single-layer molybdenum disulphide, which also depends on the grain misorientation angle. This work opens up new possibilities for flexible electronic and optoelectronic devices with tunable bandgaps that utilize both the control of two-dimensional layer thickness and the grain boundary engineering.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Bandgap tunability at single-layer molybdenum disulphide grain boundaries 2015, 6:6298 Nature Communications
Publisher:
Nature Publishing Group
Journal:
Nature Communications
Issue Date:
17-Feb-2015
DOI:
10.1038/ncomms7298
Type:
Article
ISSN:
2041-1723
Additional Links:
http://www.nature.com/doifinder/10.1038/ncomms7298
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHuang, Yu Lien
dc.contributor.authorChen, Yifengen
dc.contributor.authorZhang, Wenjingen
dc.contributor.authorQuek, Su Yingen
dc.contributor.authorChen, Chang-Hsiaoen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorHsu, Wei-Tingen
dc.contributor.authorChang, Wen-Haoen
dc.contributor.authorZheng, Yu Jieen
dc.contributor.authorChen, Weien
dc.contributor.authorWee, Andrew T. S.en
dc.date.accessioned2015-03-17T13:40:56Zen
dc.date.available2015-03-17T13:40:56Zen
dc.date.issued2015-02-17en
dc.identifier.citationBandgap tunability at single-layer molybdenum disulphide grain boundaries 2015, 6:6298 Nature Communicationsen
dc.identifier.issn2041-1723en
dc.identifier.doi10.1038/ncomms7298en
dc.identifier.urihttp://hdl.handle.net/10754/346778en
dc.description.abstractTwo-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties of interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents a prototype two-dimensional transition metal dichalcogenide, has an electronic bandgap that increases with decreasing layer thickness. Using high-resolution scanning tunnelling microscopy and spectroscopy, we measure the apparent quasiparticle energy gap to be 2.40±0.05 eV for single-layer, 2.10±0.05 eV for bilayer and 1.75±0.05 eV for trilayer molybdenum disulphide, which were directly grown on a graphite substrate by chemical vapour deposition method. More interestingly, we report an unexpected bandgap tunability (as large as 0.85±0.05 eV) with distance from the grain boundary in single-layer molybdenum disulphide, which also depends on the grain misorientation angle. This work opens up new possibilities for flexible electronic and optoelectronic devices with tunable bandgaps that utilize both the control of two-dimensional layer thickness and the grain boundary engineering.en
dc.publisherNature Publishing Groupen
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/ncomms7298en
dc.rightsArchived with thanks to Nature Communications.en
dc.titleBandgap tunability at single-layer molybdenum disulphide grain boundariesen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNature Communicationsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singaporeen
dc.contributor.institutionCentre for Advanced 2D Materials and Graphene Research, National University of Singapore, Block S14, Level 6, 6 Science Drive 2, Singapore 117546, Singaporeen
dc.contributor.institutionSZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Shenzhen University, Shenzhen 518060, Chinaen
dc.contributor.institutionKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060, Chinaen
dc.contributor.institutionInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwanen
dc.contributor.institutionDepartment of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwanen
dc.contributor.institutionDepartment of Chemistry, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singaporeen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorLi, Lain-Jongen
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