Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

Handle URI:
http://hdl.handle.net/10754/346770
Title:
Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering
Authors:
Pergolesi, Daniele; Roddatis, Vladimir; Fabbri, Emiliana; Schneider, Christof W; Lippert, Thomas; Traversa, Enrico ( 0000-0001-6336-941X ) ; Kilner, John A
Abstract:
Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering 2015, 16 (1):015001 Science and Technology of Advanced Materials
Publisher:
Informa UK Limited
Journal:
Science and Technology of Advanced Materials
Issue Date:
1-Feb-2015
DOI:
10.1088/1468-6996/16/1/015001
Type:
Article
ISSN:
1468-6996; 1878-5514
Additional Links:
http://stacks.iop.org/1468-6996/16/i=1/a=015001?key=crossref.cbef4704f6649e4f78f7f2875116707e
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorPergolesi, Danieleen
dc.contributor.authorRoddatis, Vladimiren
dc.contributor.authorFabbri, Emilianaen
dc.contributor.authorSchneider, Christof Wen
dc.contributor.authorLippert, Thomasen
dc.contributor.authorTraversa, Enricoen
dc.contributor.authorKilner, John Aen
dc.date.accessioned2015-03-17T13:38:45Zen
dc.date.available2015-03-17T13:38:45Zen
dc.date.issued2015-02-01en
dc.identifier.citationProbing the bulk ionic conductivity by thin film hetero-epitaxial engineering 2015, 16 (1):015001 Science and Technology of Advanced Materialsen
dc.identifier.issn1468-6996en
dc.identifier.issn1878-5514en
dc.identifier.doi10.1088/1468-6996/16/1/015001en
dc.identifier.urihttp://hdl.handle.net/10754/346770en
dc.description.abstractHighly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.en
dc.publisherInforma UK Limiteden
dc.relation.urlhttp://stacks.iop.org/1468-6996/16/i=1/a=015001?key=crossref.cbef4704f6649e4f78f7f2875116707een
dc.rightsContent from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.en
dc.titleProbing the bulk ionic conductivity by thin film hetero-epitaxial engineeringen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalScience and Technology of Advanced Materialsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionPaul Scherrer Institut, Department of General Energy Research, CH-5225, Villigen-PSI, Switzerlanden
dc.contributor.institutionInternational Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japanen
dc.contributor.institutionCIC Energigune, Albert Einstein 48, E-01510—Miñano (Álava), Spainen
dc.contributor.institutionDepartment of Materials, Imperial College London, London SW7 2BP, UKen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorTraversa, Enricoen
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