Spin Hall effect by surface roughness

Handle URI:
http://hdl.handle.net/10754/346762
Title:
Spin Hall effect by surface roughness
Authors:
Zhou, Lingjun; Grigoryan, Vahram L.; Maekawa, Sadamichi; Wang, Xuhui; Xiao, Jiang
Abstract:
The spin Hall and its inverse effects, driven by the spin orbit interaction, provide an interconversion mechanism between spin and charge currents. Since the spin Hall effect generates and manipulates spin current electrically, to achieve a large effect is becoming an important topic in both academia and industries. So far, materials with heavy elements carrying a strong spin orbit interaction, provide the only option. We propose here a new mechanism, using the surface roughness in ultrathin films, to enhance the spin Hall effect without heavy elements. Our analysis based on Cu and Al thin films suggests that surface roughness is capable of driving a spin Hall angle that is comparable to that in bulk Au. We also demonstrate that the spin Hall effect induced by surface roughness subscribes only to the side-jump contribution but not the skew scattering. The paradigm proposed in this paper provides the second, not if only, alternative to generate a sizable spin Hall effect.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Spin Hall effect by surface roughness 2015, 91 (4) Physical Review B
Publisher:
American Physical Society
Journal:
Physical Review B
Issue Date:
8-Jan-2015
DOI:
10.1103/PhysRevB.91.045407
Type:
Article
ISSN:
1098-0121; 1550-235X
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevB.91.045407; http://arxiv.org/abs/1407.8310
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZhou, Lingjunen
dc.contributor.authorGrigoryan, Vahram L.en
dc.contributor.authorMaekawa, Sadamichien
dc.contributor.authorWang, Xuhuien
dc.contributor.authorXiao, Jiangen
dc.date.accessioned2015-03-17T13:16:57Zen
dc.date.available2015-03-17T13:16:57Zen
dc.date.issued2015-01-08en
dc.identifier.citationSpin Hall effect by surface roughness 2015, 91 (4) Physical Review Ben
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.91.045407en
dc.identifier.urihttp://hdl.handle.net/10754/346762en
dc.description.abstractThe spin Hall and its inverse effects, driven by the spin orbit interaction, provide an interconversion mechanism between spin and charge currents. Since the spin Hall effect generates and manipulates spin current electrically, to achieve a large effect is becoming an important topic in both academia and industries. So far, materials with heavy elements carrying a strong spin orbit interaction, provide the only option. We propose here a new mechanism, using the surface roughness in ultrathin films, to enhance the spin Hall effect without heavy elements. Our analysis based on Cu and Al thin films suggests that surface roughness is capable of driving a spin Hall angle that is comparable to that in bulk Au. We also demonstrate that the spin Hall effect induced by surface roughness subscribes only to the side-jump contribution but not the skew scattering. The paradigm proposed in this paper provides the second, not if only, alternative to generate a sizable spin Hall effect.en
dc.publisherAmerican Physical Societyen
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.91.045407en
dc.relation.urlhttp://arxiv.org/abs/1407.8310en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleSpin Hall effect by surface roughnessen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433, Chinaen
dc.contributor.institutionAdvanced Science Research Center, Japan Atomic Energy Agency, Tokai 319-1195, Japanen
dc.contributor.institutionCREST, Japan Science and Technology Agency, Tokyo 102-0075, Japanen
dc.contributor.institutionCollaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, Chinaen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
dc.identifier.arxividarXiv:1407.8310en
kaust.authorWang, Xuhuien
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