Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon

Handle URI:
http://hdl.handle.net/10754/346751
Title:
Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon
Authors:
Jahangir, Shafat; Frost, Thomas; Hazari, Arnab; Yan, Lifan; Stark, Ethan; LaMountain, Trevor ( 0000-0003-4800-5559 ) ; Millunchick, Joanna M.; Ooi, Boon S. ( 0000-0001-9606-5578 ) ; Bhattacharya, Pallab
Abstract:
The small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Small signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon 2015, 106 (7):071108 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
16-Feb-2015
DOI:
10.1063/1.4913317
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/106/7/10.1063/1.4913317
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorJahangir, Shafaten
dc.contributor.authorFrost, Thomasen
dc.contributor.authorHazari, Arnaben
dc.contributor.authorYan, Lifanen
dc.contributor.authorStark, Ethanen
dc.contributor.authorLaMountain, Trevoren
dc.contributor.authorMillunchick, Joanna M.en
dc.contributor.authorOoi, Boon S.en
dc.contributor.authorBhattacharya, Pallaben
dc.date.accessioned2015-03-17T06:09:11Zen
dc.date.available2015-03-17T06:09:11Zen
dc.date.issued2015-02-16en
dc.identifier.citationSmall signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) silicon 2015, 106 (7):071108 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4913317en
dc.identifier.urihttp://hdl.handle.net/10754/346751en
dc.description.abstractThe small signal modulation characteristics of an InGaN/GaN nanowire array edge- emitting laser on (001) silicon are reported. The emission wavelength is 610 nm. Lattice matched InAlN cladding layers were incorporated in the laser heterostructure for better mode confinement. The suitability of the nanowire lasers for use in plastic fiber communication systems with direct modulation is demonstrated through their modulation bandwidth of f-3dB,max = 3.1 GHz, very low values of chirp (0.8 Å) and α-parameter, and large differential gain (3.1 × 10-17 cm2).en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/106/7/10.1063/1.4913317en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleSmall signal modulation characteristics of red-emitting (λ = 610 nm) III-nitride nanowire array lasers on (001) siliconen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionCenter for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USAen
dc.contributor.institutionCenter for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USAen
dc.contributor.institutionCenter for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USAen
dc.contributor.institutionCenter for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USAen
dc.contributor.institutionCenter for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USAen
dc.contributor.institutionCenter for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USAen
dc.contributor.institutionCenter for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USAen
dc.contributor.institutionCenter for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USAen
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USAen
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2122, USAen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorOoi, Boon S.en
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