High temperature study of flexible silicon-on-insulator fin field-effect transistors

Handle URI:
http://hdl.handle.net/10754/346746
Title:
High temperature study of flexible silicon-on-insulator fin field-effect transistors
Authors:
Diab, Amer El Hajj; Sevilla, Galo T. ( 0000-0002-9419-4437 ) ; Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry's most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Integrated Nanotechnology Lab
Citation:
High temperature study of flexible silicon-on-insulator fin field-effect transistors 2014, 105 (13):133509 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
29-Sep-2014
DOI:
10.1063/1.4897148
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/105/13/10.1063/1.4897148
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorDiab, Amer El Hajjen
dc.contributor.authorSevilla, Galo T.en
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-03-17T06:06:51Zen
dc.date.available2015-03-17T06:06:51Zen
dc.date.issued2014-09-29en
dc.identifier.citationHigh temperature study of flexible silicon-on-insulator fin field-effect transistors 2014, 105 (13):133509 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4897148en
dc.identifier.urihttp://hdl.handle.net/10754/346746en
dc.description.abstractWe report high temperature electrical transport characteristics of a flexible version of the semiconductor industry's most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/105/13/10.1063/1.4897148en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleHigh temperature study of flexible silicon-on-insulator fin field-effect transistorsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorHussain, Muhammad Mustafaen
kaust.authorDiab, Amer El Hajjen
kaust.authorSevilla, Galo T.en
kaust.authorGhoneim, Mohamed T.en
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