Vacancy complexes induce long-range ferromagnetism in GaN

Handle URI:
http://hdl.handle.net/10754/346741
Title:
Vacancy complexes induce long-range ferromagnetism in GaN
Authors:
Zhang, Zhenkui; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Roqan, Iman S. ( 0000-0001-7442-4330 )
Abstract:
By means of density functional theory, we argue that ferromagnetism in GaN can be induced by vacancy complexes. Spin polarization originates from the charge compensation between neutral N and Ga vacancies. Defect formation energy calculations predict that a vacancy complex of two positively charged N vacancies and one doubly negative Ga vacancy is likely to form. This defect complex induces a net moment of 1 μB, which is localized around the negative Ga center and exhibits pronounced in-plane ferromagnetic coupling. In contrast to simple Ga vacancy induced ferromagnetism, the proposed picture is in line with the fact that N vacancies have a low formation energy. Formation energies indicate mutual stabilization of the intrinsic defects in GaN.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Vacancy complexes induce long-range ferromagnetism in GaN 2014, 116 (18):183905 Journal of Applied Physics
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
14-Nov-2014
DOI:
10.1063/1.4901458
Type:
Article
ISSN:
0021-8979; 1089-7550
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/116/18/10.1063/1.4901458
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Zhenkuien
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorRoqan, Iman S.en
dc.date.accessioned2015-03-17T06:00:58Zen
dc.date.available2015-03-17T06:00:58Zen
dc.date.issued2014-11-14en
dc.identifier.citationVacancy complexes induce long-range ferromagnetism in GaN 2014, 116 (18):183905 Journal of Applied Physicsen
dc.identifier.issn0021-8979en
dc.identifier.issn1089-7550en
dc.identifier.doi10.1063/1.4901458en
dc.identifier.urihttp://hdl.handle.net/10754/346741en
dc.description.abstractBy means of density functional theory, we argue that ferromagnetism in GaN can be induced by vacancy complexes. Spin polarization originates from the charge compensation between neutral N and Ga vacancies. Defect formation energy calculations predict that a vacancy complex of two positively charged N vacancies and one doubly negative Ga vacancy is likely to form. This defect complex induces a net moment of 1 μB, which is localized around the negative Ga center and exhibits pronounced in-plane ferromagnetic coupling. In contrast to simple Ga vacancy induced ferromagnetism, the proposed picture is in line with the fact that N vacancies have a low formation energy. Formation energies indicate mutual stabilization of the intrinsic defects in GaN.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/116/18/10.1063/1.4901458en
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleVacancy complexes induce long-range ferromagnetism in GaNen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorZhang, Zhenkuien
kaust.authorSchwingenschlögl, Udoen
kaust.authorRoqan, Iman S.en
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