Magnetoresistance of Mn-decorated topological line defects in graphene

Handle URI:
http://hdl.handle.net/10754/346733
Title:
Magnetoresistance of Mn-decorated topological line defects in graphene
Authors:
Obodo, Tobechukwu Joshua ( 0000-0003-1511-0918 ) ; Kahaly, M. Upadhyay; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
We study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green's function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Magnetoresistance of Mn-decorated topological line defects in graphene 2015, 91 (1) Physical Review B
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
13-Jan-2015
DOI:
10.1103/PhysRevB.91.014413
Type:
Article
ISSN:
1098-0121; 1550-235X
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevB.91.014413
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorObodo, Tobechukwu Joshuaen
dc.contributor.authorKahaly, M. Upadhyayen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2015-03-17T06:12:00Zen
dc.date.available2015-03-17T06:12:00Zen
dc.date.issued2015-01-13en
dc.identifier.citationMagnetoresistance of Mn-decorated topological line defects in graphene 2015, 91 (1) Physical Review Ben
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.91.014413en
dc.identifier.urihttp://hdl.handle.net/10754/346733en
dc.description.abstractWe study the spin polarized transport through Mn-decorated 8-5-5-8 topological line defects in graphene using the nonequilibrium Green's function formalism. Strong preferential bonding overcomes the high mobility of transition metal atoms on graphene and results in stable structures. Despite a large distance between the magnetic centers, we find a high magnetoresistance and attribute this unexpected property to very strong induced π magnetism, in particular for full coverage of all octagonal hollow sites by Mn atoms. In contrast to the magnetoresistance of graphene nanoribbon edges, the proposed system is well controlled and therefore suitable for applications.en
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.91.014413en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleMagnetoresistance of Mn-decorated topological line defects in grapheneen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorKahaly, M. Upadhyayen
kaust.authorSchwingenschlögl, Udoen
kaust.authorObodo, Tobechukwu Joshuaen
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