Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes

Handle URI:
http://hdl.handle.net/10754/346729
Title:
Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes
Authors:
Roqan, Iman S. ( 0000-0001-7442-4330 ) ; Venkatesh, S.; Zhang, Z.; Hussain, S.; Bantounas, Ioannis; Franklin, J. B.; Flemban, Tahani H. ( 0000-0002-2661-5092 ) ; Zou, B.; Lee, J.-S.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Petrov, P. K.; Ryan, M. P.; Alford, N. M.
Abstract:
We demonstrate the fabrication of reproducible long-range ferromagnetism (FM) in highly crystalline GdxZn1-xO thin films by controlling the defects. Films are grown on lattice-matched substrates by pulsed laser deposition at low oxygen pressures (≤25 mTorr) and low Gd concentrations (x ≤ 0.009). These films feature strong FM (10 μB per Gd atom) at room temperature. While films deposited at higher oxygen pressure do not exhibit FM, FM is recovered by post-annealing these films under vacuum. These findings reveal the contribution of oxygen deficiency defects to the long-range FM. We demonstrate the possible FM mechanisms, which are confirmed by density functional theory study, and show that Gd dopants are essential for establishing FM that is induced by intrinsic defects in these films.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes 2015, 117 (7):073904 Journal of Applied Physics
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
21-Feb-2015
DOI:
10.1063/1.4908288
Type:
Article
ISSN:
0021-8979; 1089-7550
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/117/7/10.1063/1.4908288
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorRoqan, Iman S.en
dc.contributor.authorVenkatesh, S.en
dc.contributor.authorZhang, Z.en
dc.contributor.authorHussain, S.en
dc.contributor.authorBantounas, Ioannisen
dc.contributor.authorFranklin, J. B.en
dc.contributor.authorFlemban, Tahani H.en
dc.contributor.authorZou, B.en
dc.contributor.authorLee, J.-S.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorPetrov, P. K.en
dc.contributor.authorRyan, M. P.en
dc.contributor.authorAlford, N. M.en
dc.date.accessioned2015-03-17T06:09:33Zen
dc.date.available2015-03-17T06:09:33Zen
dc.date.issued2015-02-21en
dc.identifier.citationObtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes 2015, 117 (7):073904 Journal of Applied Physicsen
dc.identifier.issn0021-8979en
dc.identifier.issn1089-7550en
dc.identifier.doi10.1063/1.4908288en
dc.identifier.urihttp://hdl.handle.net/10754/346729en
dc.description.abstractWe demonstrate the fabrication of reproducible long-range ferromagnetism (FM) in highly crystalline GdxZn1-xO thin films by controlling the defects. Films are grown on lattice-matched substrates by pulsed laser deposition at low oxygen pressures (≤25 mTorr) and low Gd concentrations (x ≤ 0.009). These films feature strong FM (10 μB per Gd atom) at room temperature. While films deposited at higher oxygen pressure do not exhibit FM, FM is recovered by post-annealing these films under vacuum. These findings reveal the contribution of oxygen deficiency defects to the long-range FM. We demonstrate the possible FM mechanisms, which are confirmed by density functional theory study, and show that Gd dopants are essential for establishing FM that is induced by intrinsic defects in these films.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/117/7/10.1063/1.4908288en
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleObtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexesen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials and London Centre for Nanotechnology, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.institutionDepartment of Materials and London Centre for Nanotechnology, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.institutionStanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USAen
dc.contributor.institutionDepartment of Materials and London Centre for Nanotechnology, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.institutionDepartment of Materials and London Centre for Nanotechnology, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.institutionDepartment of Materials and London Centre for Nanotechnology, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorRoqan, Iman S.en
kaust.authorZhang, Zhenkuien
kaust.authorBantounas, Ioannisen
kaust.authorSchwingenschlögl, Udoen
kaust.authorVenkatesh, Sureshen
kaust.authorHussain, Shahiden
kaust.authorFlemban, Tahani H.en
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