Excitonic localization in AlN-rich AlxGa1−xN/AlyGa1−yN multi-quantum-well grain boundaries

Handle URI:
http://hdl.handle.net/10754/346727
Title:
Excitonic localization in AlN-rich AlxGa1−xN/AlyGa1−yN multi-quantum-well grain boundaries
Authors:
Ajia, Idris A. ( 0000-0003-3156-4426 ) ; Edwards, P. R.; Liu, Z.; Yan, J. C.; Martin, R. W.; Roqan, Iman S. ( 0000-0001-7442-4330 )
Abstract:
AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Excitonic localization in AlN-rich AlxGa1−xN/AlyGa1−yN multi-quantum-well grain boundaries 2014, 105 (12):122111 Applied Physics Letters
Publisher:
American Institute of Physics
Journal:
Applied Physics Letters
Issue Date:
22-Sep-2014
DOI:
10.1063/1.4896681
Type:
Article
ISSN:
0003-6951; 1077-3118
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/105/12/10.1063/1.4896681
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorAjia, Idris A.en
dc.contributor.authorEdwards, P. R.en
dc.contributor.authorLiu, Z.en
dc.contributor.authorYan, J. C.en
dc.contributor.authorMartin, R. W.en
dc.contributor.authorRoqan, Iman S.en
dc.date.accessioned2015-03-17T06:06:28Zen
dc.date.available2015-03-17T06:06:28Zen
dc.date.issued2014-09-22en
dc.identifier.citationExcitonic localization in AlN-rich AlxGa1−xN/AlyGa1−yN multi-quantum-well grain boundaries 2014, 105 (12):122111 Applied Physics Lettersen
dc.identifier.issn0003-6951en
dc.identifier.issn1077-3118en
dc.identifier.doi10.1063/1.4896681en
dc.identifier.urihttp://hdl.handle.net/10754/346727en
dc.description.abstractAlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples.en
dc.publisherAmerican Institute of Physicsen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/105/12/10.1063/1.4896681en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleExcitonic localization in AlN-rich AlxGa1−xN/AlyGa1−yN multi-quantum-well grain boundariesen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics, SUPA, University of Strathclyde, Glasgow, Scotland, United Kingdomen
dc.contributor.institutionR&D Center for Semiconductor Lighting, Chinese Academy of Science, Beijing, Chinaen
dc.contributor.institutionR&D Center for Semiconductor Lighting, Chinese Academy of Science, Beijing, Chinaen
dc.contributor.institutionDepartment of Physics, SUPA, University of Strathclyde, Glasgow, Scotland, United Kingdomen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorRoqan, Iman S.en
kaust.authorAjia, Idris A.en
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