Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions

Handle URI:
http://hdl.handle.net/10754/346725
Title:
Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions
Authors:
Awan, Saif Ullah; Hasanain, S. K.; Hassnain Jaffari, G.; Anjum, Dalaver H.; Qurashi, Umar S.
Abstract:
Microstructural and optical properties of Zn1-yLiyO (0.00 ≤y ≤0.10) nanoparticles are investigated. Li incorporation leads to substantial changes in the structural characterization. From micro-structural analysis, no secondary phases or clustering of Li was detected. Elemental maps confirmed homogeneous distribution of Li in ZnO. Sharp UV peak due to the recombination of free exciton and defects based luminescence broad visible band was observed. The transition from the conduction band to Zinc vacancy defect level in photoluminescence spectra is found at 518±2.5nm. The yellow luminescence was observed and attributed to Li related defects in doped samples. With increasing Li doping, a decrease in energy bandgap was observed in the range 3.26±0.014 to 3.17±0.018eV. The bandgap narrowing behavior is explained in terms of the band tailing effect due to structural disorder, carrier-impurities, carrier-carrier, and carrier-phonon interactions. Tuning of the bandgap energy in this class of wide bandgap semiconductor is very important for room temperature spintronics applications and optical devices. © 2014 AIP Publishing LLC.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab
Citation:
Defects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions 2014, 116 (8):083510 Journal of Applied Physics
Publisher:
American Institute of Physics
Journal:
Journal of Applied Physics
Issue Date:
28-Aug-2014
DOI:
10.1063/1.4894153
Type:
Article
ISSN:
0021-8979; 1089-7550
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/116/8/10.1063/1.4894153
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorAwan, Saif Ullahen
dc.contributor.authorHasanain, S. K.en
dc.contributor.authorHassnain Jaffari, G.en
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorQurashi, Umar S.en
dc.date.accessioned2015-03-17T06:05:50Zen
dc.date.available2015-03-17T06:05:50Zen
dc.date.issued2014-08-28en
dc.identifier.citationDefects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ions 2014, 116 (8):083510 Journal of Applied Physicsen
dc.identifier.issn0021-8979en
dc.identifier.issn1089-7550en
dc.identifier.doi10.1063/1.4894153en
dc.identifier.urihttp://hdl.handle.net/10754/346725en
dc.description.abstractMicrostructural and optical properties of Zn1-yLiyO (0.00 ≤y ≤0.10) nanoparticles are investigated. Li incorporation leads to substantial changes in the structural characterization. From micro-structural analysis, no secondary phases or clustering of Li was detected. Elemental maps confirmed homogeneous distribution of Li in ZnO. Sharp UV peak due to the recombination of free exciton and defects based luminescence broad visible band was observed. The transition from the conduction band to Zinc vacancy defect level in photoluminescence spectra is found at 518±2.5nm. The yellow luminescence was observed and attributed to Li related defects in doped samples. With increasing Li doping, a decrease in energy bandgap was observed in the range 3.26±0.014 to 3.17±0.018eV. The bandgap narrowing behavior is explained in terms of the band tailing effect due to structural disorder, carrier-impurities, carrier-carrier, and carrier-phonon interactions. Tuning of the bandgap energy in this class of wide bandgap semiconductor is very important for room temperature spintronics applications and optical devices. © 2014 AIP Publishing LLC.en
dc.publisherAmerican Institute of Physicsen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/116/8/10.1063/1.4894153en
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleDefects induced luminescence and tuning of bandgap energy narrowing in ZnO nanoparticles doped with Li ionsen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics, Quaid-i-Azam University, Islamabad, Pakistanen
dc.contributor.institutionDepartment of Physics, Quaid-i-Azam University, Islamabad, Pakistanen
dc.contributor.institutionDepartment of Physics, Quaid-i-Azam University, Islamabad, Pakistanen
dc.contributor.institutionDepartment of Physics, Quaid-i-Azam University, Islamabad, Pakistanen
dc.contributor.institutionDepartment of Physics, COMSATS Institute of Information Technology, Islamabad 44000, Pakistanen
dc.contributor.institutionNational Center for Physics, Shahdara Valley Road, Islamabad, Pakistanen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorAnjum, Dalaver H.en
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