Exploring atomic defects in molybdenum disulphide monolayers

Handle URI:
http://hdl.handle.net/10754/346700
Title:
Exploring atomic defects in molybdenum disulphide monolayers
Authors:
Hong, Jinhua; Hu, Zhixin; Probert, Matt; Li, Kun; Lv, Danhui; Yang, Xinan; Gu, Lin; Mao, Nannan; Feng, Qingliang; Xie, Liming; Zhang, Jin; Wu, Dianzhong; Zhang, Zhiyong; Jin, Chuanhong; Ji, Wei; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Yuan, Jun; Zhang, Ze
Abstract:
Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10 13 cm '2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab
Citation:
Exploring atomic defects in molybdenum disulphide monolayers 2015, 6:6293 Nature Communications
Publisher:
Nature Publishing Group
Journal:
Nature Communications
Issue Date:
19-Feb-2015
DOI:
10.1038/ncomms7293
PubMed ID:
25695374
PubMed Central ID:
PMC4346634
Type:
Article
ISSN:
2041-1723
Additional Links:
http://www.nature.com/doifinder/10.1038/ncomms7293
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorHong, Jinhuaen
dc.contributor.authorHu, Zhixinen
dc.contributor.authorProbert, Matten
dc.contributor.authorLi, Kunen
dc.contributor.authorLv, Danhuien
dc.contributor.authorYang, Xinanen
dc.contributor.authorGu, Linen
dc.contributor.authorMao, Nannanen
dc.contributor.authorFeng, Qingliangen
dc.contributor.authorXie, Limingen
dc.contributor.authorZhang, Jinen
dc.contributor.authorWu, Dianzhongen
dc.contributor.authorZhang, Zhiyongen
dc.contributor.authorJin, Chuanhongen
dc.contributor.authorJi, Weien
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorYuan, Junen
dc.contributor.authorZhang, Zeen
dc.date.accessioned2015-03-16T05:57:17Zen
dc.date.available2015-03-16T05:57:17Zen
dc.date.issued2015-02-19en
dc.identifier.citationExploring atomic defects in molybdenum disulphide monolayers 2015, 6:6293 Nature Communicationsen
dc.identifier.issn2041-1723en
dc.identifier.pmid25695374en
dc.identifier.doi10.1038/ncomms7293en
dc.identifier.urihttp://hdl.handle.net/10754/346700en
dc.description.abstractDefects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10 13 cm '2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.en
dc.publisherNature Publishing Groupen
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/ncomms7293en
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.titleExploring atomic defects in molybdenum disulphide monolayersen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalNature Communicationsen
dc.identifier.pmcidPMC4346634en
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionState Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, School of Materials Science and Engineering, Zhejiang Universityen
dc.contributor.institutionBeijing Key Laboratory of Optoelectronic Functional Materials and Micro- Nano Devices, Department of Physics, Renmin University of Chinaen
dc.contributor.institutionDepartment of Physics, University of Yorken
dc.contributor.institutionInstituteof Physics, Chinese Academy of Sciences, c/o Collaborative Innovation Center of Quantum Matteren
dc.contributor.institutionCAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technologyen
dc.contributor.institutionCenter for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking Universityen
dc.contributor.institutionKey Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking Universityen
dc.contributor.institutionDepartment of Physics and Astronomy, Collaborative Innovation Center of Advanced Microstructures, Shanghai Jiao Tong Universityen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorLi, Kunen
kaust.authorZhang, Xixiangen

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