Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene

Handle URI:
http://hdl.handle.net/10754/338572
Title:
Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene
Authors:
Lin, Yu-Chuan; Chang, Chih-Yuan S.; Ghosh, Ram Krishna; Li, Jie; Zhu, Hui; Addou, Rafik; Diaconescu, Bogdan; Ohta, Taisuke; Peng, Xin; Lu, Ning; Kim, Moon J.; Robinson, Jeremy T.; Wallace, Robert M; Mayer, Theresa S.; Datta, Suman; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Robinson, Joshua A.
Abstract:
Heterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green's function (NEGF).
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene 2014, 14 (12):6936 Nano Letters
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
10-Nov-2014
DOI:
10.1021/nl503144a
Type:
Article
ISSN:
1530-6984; 1530-6992
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/nl503144a
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLin, Yu-Chuanen
dc.contributor.authorChang, Chih-Yuan S.en
dc.contributor.authorGhosh, Ram Krishnaen
dc.contributor.authorLi, Jieen
dc.contributor.authorZhu, Huien
dc.contributor.authorAddou, Rafiken
dc.contributor.authorDiaconescu, Bogdanen
dc.contributor.authorOhta, Taisukeen
dc.contributor.authorPeng, Xinen
dc.contributor.authorLu, Ningen
dc.contributor.authorKim, Moon J.en
dc.contributor.authorRobinson, Jeremy T.en
dc.contributor.authorWallace, Robert Men
dc.contributor.authorMayer, Theresa S.en
dc.contributor.authorDatta, Sumanen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorRobinson, Joshua A.en
dc.date.accessioned2015-01-20T06:22:24Z-
dc.date.available2015-01-20T06:22:24Z-
dc.date.issued2014-11-10en
dc.identifier.citationAtomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene 2014, 14 (12):6936 Nano Lettersen
dc.identifier.issn1530-6984en
dc.identifier.issn1530-6992en
dc.identifier.doi10.1021/nl503144aen
dc.identifier.urihttp://hdl.handle.net/10754/338572en
dc.description.abstractHeterogeneous engineering of two-dimensional layered materials, including metallic graphene and semiconducting transition metal dichalcogenides, presents an exciting opportunity to produce highly tunable electronic and optoelectronic systems. In order to engineer pristine layers and their interfaces, epitaxial growth of such heterostructures is required. We report the direct growth of crystalline, monolayer tungsten diselenide (WSe2) on epitaxial graphene (EG) grown from silicon carbide. Raman spectroscopy, photoluminescence, and scanning tunneling microscopy confirm high-quality WSe2 monolayers, whereas transmission electron microscopy shows an atomically sharp interface, and low energy electron diffraction confirms near perfect orientation between WSe2 and EG. Vertical transport measurements across the WSe2/EG heterostructure provides evidence that an additional barrier to carrier transport beyond the expected WSe2/EG band offset exists due to the interlayer gap, which is supported by theoretical local density of states (LDOS) calculations using self-consistent density functional theory (DFT) and nonequilibrium Green's function (NEGF).en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/nl503144aen
dc.rightsArchived with thanks to Nano Lettersen
dc.subjectdirect growthen
dc.subjectheterostructuresen
dc.subjectgrapheneen
dc.subjecttungsten diselenideen
dc.subjectLEED/LEEMen
dc.subjectelectron tunnelingen
dc.subjectconductive AFMen
dc.titleAtomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Grapheneen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNano Lettersen
dc.eprint.versionPost-printen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorLi, Lain-Jongen
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