Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection

Handle URI:
http://hdl.handle.net/10754/338571
Title:
Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection
Authors:
Chang, Yung-Huang; Zhang, Wenjing; Zhu, Yihan; Han, Yu ( 0000-0003-1462-1118 ) ; Pu, Jiang; Chang, Jan-Kai; Hsu, Wei-Ting; Huang, Jing-Kai; Hsu, Chang-Lung; Chiu, Ming-Hui; Takenobu, Taishi; Li, Henan; Wu, Chih-I; Chang, Wen-Hao; Wee, Andrew Thye Shen; Li, Lain-Jong ( 0000-0002-4059-7783 )
Abstract:
Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices. © 2014 American Chemical Society.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Monolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection 2014, 8 (8):8582 ACS Nano
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
26-Aug-2014
DOI:
10.1021/nn503287m
Type:
Article
ISSN:
1936-0851; 1936-086X
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/nn503287m
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorChang, Yung-Huangen
dc.contributor.authorZhang, Wenjingen
dc.contributor.authorZhu, Yihanen
dc.contributor.authorHan, Yuen
dc.contributor.authorPu, Jiangen
dc.contributor.authorChang, Jan-Kaien
dc.contributor.authorHsu, Wei-Tingen
dc.contributor.authorHuang, Jing-Kaien
dc.contributor.authorHsu, Chang-Lungen
dc.contributor.authorChiu, Ming-Huien
dc.contributor.authorTakenobu, Taishien
dc.contributor.authorLi, Henanen
dc.contributor.authorWu, Chih-Ien
dc.contributor.authorChang, Wen-Haoen
dc.contributor.authorWee, Andrew Thye Shenen
dc.contributor.authorLi, Lain-Jongen
dc.date.accessioned2015-01-20T06:16:22Z-
dc.date.available2015-01-20T06:16:22Z-
dc.date.issued2014-08-26en
dc.identifier.citationMonolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetection 2014, 8 (8):8582 ACS Nanoen
dc.identifier.issn1936-0851en
dc.identifier.issn1936-086Xen
dc.identifier.doi10.1021/nn503287men
dc.identifier.urihttp://hdl.handle.net/10754/338571en
dc.description.abstractMonolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices. © 2014 American Chemical Society.en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/nn503287men
dc.rightsArchived with thanks to ACS Nanoen
dc.subjectTransition metal dichalcogenidesen
dc.subjectPhotoresponseen
dc.subjectMoSe2en
dc.subjectMoS2en
dc.subject2D Materialsen
dc.titleMonolayer MoSe 2 Grown by Chemical Vapor Deposition for Fast Photodetectionen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Nanoen
dc.eprint.versionPost-printen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorZhu, Yihanen
kaust.authorHan, Yuen
kaust.authorLi, Lain-Jongen
kaust.authorChiu, Ming-Huien
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