Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

Handle URI:
http://hdl.handle.net/10754/338549
Title:
Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques
Authors:
Shi, Yumeng; Li, Henan; Li, Lain-Jong ( 0000-0002-4059-7783 )
Abstract:
In recent years there have been many breakthroughs in two-dimensional (2D) nanomaterials, among which the transition metal dichalcogenides (TMDs) attract significant attention owing to their unusual properties associated with their strictly defined dimensionalities. TMD materials with a generalized formula of MX2, where M is a transition metal and X is a chalcogen, represent a diverse and largely untapped source of 2D systems. Semiconducting TMD monolayers such as MoS2, MoSe2, WSe2 and WS2 have been demonstrated to be feasible for future electronics and optoelectronics. The exotic electronic properties and high specific surface areas of 2D TMDs offer unlimited potential in various fields including sensing, catalysis, and energy storage applications. Very recently, the chemical vapour deposition technique (CVD) has shown great promise to generate high-quality TMD layers with a scalable size, controllable thickness and excellent electronic properties. Wafer-scale deposition of mono to few layer TMD films has been obtained. Despite the initial success in the CVD synthesis of TMDs, substantial research studies on extending the methodology open up a new way for substitution doping, formation of monolayer alloys and producing TMD stacking structures or superlattices. In this tutorial review, we will introduce the latest development of the synthesis of monolayer TMDs by CVD approaches.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques 2014 Chem. Soc. Rev.
Publisher:
Royal Society of Chemistry (RSC)
Journal:
Chem. Soc. Rev.
Issue Date:
20-Oct-2014
DOI:
10.1039/C4CS00256C
Type:
Article
ISSN:
0306-0012; 1460-4744
Additional Links:
http://xlink.rsc.org/?DOI=C4CS00256C
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorShi, Yumengen
dc.contributor.authorLi, Henanen
dc.contributor.authorLi, Lain-Jongen
dc.date.accessioned2015-01-19T12:47:24Z-
dc.date.available2015-01-19T12:47:24Z-
dc.date.issued2014-10-20en
dc.identifier.citationRecent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques 2014 Chem. Soc. Rev.en
dc.identifier.issn0306-0012en
dc.identifier.issn1460-4744en
dc.identifier.doi10.1039/C4CS00256Cen
dc.identifier.urihttp://hdl.handle.net/10754/338549en
dc.description.abstractIn recent years there have been many breakthroughs in two-dimensional (2D) nanomaterials, among which the transition metal dichalcogenides (TMDs) attract significant attention owing to their unusual properties associated with their strictly defined dimensionalities. TMD materials with a generalized formula of MX2, where M is a transition metal and X is a chalcogen, represent a diverse and largely untapped source of 2D systems. Semiconducting TMD monolayers such as MoS2, MoSe2, WSe2 and WS2 have been demonstrated to be feasible for future electronics and optoelectronics. The exotic electronic properties and high specific surface areas of 2D TMDs offer unlimited potential in various fields including sensing, catalysis, and energy storage applications. Very recently, the chemical vapour deposition technique (CVD) has shown great promise to generate high-quality TMD layers with a scalable size, controllable thickness and excellent electronic properties. Wafer-scale deposition of mono to few layer TMD films has been obtained. Despite the initial success in the CVD synthesis of TMDs, substantial research studies on extending the methodology open up a new way for substitution doping, formation of monolayer alloys and producing TMD stacking structures or superlattices. In this tutorial review, we will introduce the latest development of the synthesis of monolayer TMDs by CVD approaches.en
dc.language.isoenen
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.urlhttp://xlink.rsc.org/?DOI=C4CS00256Cen
dc.rightsArchived with thanks to Chem. Soc. Rev.en
dc.titleRecent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniquesen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalChem. Soc. Rev.en
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionSchool of Materials Science and Engineering, Nanyang Technological University, Block N4.1, Nanyang Avenue, Singapore 639798en
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorShi, Yumengen
kaust.authorLi, Lain-Jongen
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