Ultrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Deposition

Handle URI:
http://hdl.handle.net/10754/338540
Title:
Ultrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Deposition
Authors:
Docherty, Callum J.; Parkinson, Patrick; Joyce, Hannah J.; Chiu, Ming-Hui; Chen, Chang-Hsiao; Lee, Ming-Yang; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Herz, Laura M.; Johnston, Michael B.
Abstract:
We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Ultrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Deposition 2014, 8 (11):11147 ACS Nano
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
25-Nov-2014
DOI:
10.1021/nn5034746
Type:
Article
ISSN:
1936-0851; 1936-086X
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/nn5034746
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorDocherty, Callum J.en
dc.contributor.authorParkinson, Patricken
dc.contributor.authorJoyce, Hannah J.en
dc.contributor.authorChiu, Ming-Huien
dc.contributor.authorChen, Chang-Hsiaoen
dc.contributor.authorLee, Ming-Yangen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorHerz, Laura M.en
dc.contributor.authorJohnston, Michael B.en
dc.date.accessioned2015-01-19T12:26:23Z-
dc.date.available2015-01-19T12:26:23Z-
dc.date.issued2014-11-25en
dc.identifier.citationUltrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Deposition 2014, 8 (11):11147 ACS Nanoen
dc.identifier.issn1936-0851en
dc.identifier.issn1936-086Xen
dc.identifier.doi10.1021/nn5034746en
dc.identifier.urihttp://hdl.handle.net/10754/338540en
dc.description.abstractWe have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/nn5034746en
dc.rightsACS AuthorChoice - This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.en
dc.subjecttransition metal dichalcogenideen
dc.subjectCVDen
dc.subjectmolybdenum disulfideen
dc.subjecttungsten diselenideen
dc.subjectultrafasten
dc.subjectterahertz conductivityen
dc.subjectphotoluminescenceen
dc.titleUltrafast Transient Terahertz Conductivity of Monolayer MoS 2 and WSe 2 Grown by Chemical Vapor Depositionen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Nanoen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, U.K.en
dc.contributor.institutionInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei 115, Taiwanen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorLi, Lain-Jongen
kaust.authorChiu, Ming-Huien
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