Extraordinary magnetoresistance in semiconductor/metal hybrids: A review

Handle URI:
http://hdl.handle.net/10754/334645
Title:
Extraordinary magnetoresistance in semiconductor/metal hybrids: A review
Authors:
Sun, J.; Kosel, Jürgen ( 0000-0002-8998-8275 )
Abstract:
The Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device's performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed. 2013 by the authors.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Sun J, Kosel J (2013) Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review. Materials 6: 500-516. doi:10.3390/ma6020500.
Publisher:
MDPI
Journal:
Materials
Issue Date:
13-Feb-2013
DOI:
10.3390/ma6020500
Type:
Article
ISSN:
19961944
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSun, J.en
dc.contributor.authorKosel, Jürgenen
dc.date.accessioned2014-11-11T14:33:26Z-
dc.date.available2014-11-11T14:33:26Z-
dc.date.issued2013-02-13en
dc.identifier.citationSun J, Kosel J (2013) Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review. Materials 6: 500-516. doi:10.3390/ma6020500.en
dc.identifier.issn19961944en
dc.identifier.doi10.3390/ma6020500en
dc.identifier.urihttp://hdl.handle.net/10754/334645en
dc.description.abstractThe Extraordinary Magnetoresistance (EMR) effect is a change in the resistance of a device upon the application of a magnetic field in hybrid structures, consisting of a semiconductor and a metal. The underlying principle of this phenomenon is a change of the current path in the hybrid structure upon application of a magnetic field, due to the Lorentz force. Specifically, the ratio of current, flowing through the highly conducting metal and the poorly conducting semiconductor, changes. The main factors for the device's performance are: the device geometry, the conductivity of the metal and semiconductor, and the mobility of carriers in the semiconductor. Since the discovery of the EMR effect, much effort has been devoted to utilize its promising potential. In this review, a comprehensive overview of the research on the EMR effect and EMR devices is provided. Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed. 2013 by the authors.en
dc.language.isoenen
dc.publisherMDPIen
dc.rightsThis is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.en
dc.rightsArchived with thanks to Materialsen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectExtraordinary magnetoresistance effecten
dc.subjectHigh-mobility semiconductorsen
dc.subjectIII-V semiconductorsen
dc.subjectMagnetic sensorsen
dc.subjectMagnetoresistance effecten
dc.subjectSemiconductor/metal hybriden
dc.subjectDifferent geometryen
dc.subjectExtraordinary magnetoresistancesen
dc.subjectHigh performance devicesen
dc.subjectII-IV semiconductorsen
dc.subjectMagnetoresistance effectsen
dc.subjectMaterial selectionen
dc.subjectUnderlying principlesen
dc.subjectLorentz forceen
dc.subjectMagnetic fieldsen
dc.subjectMagnetoresistanceen
dc.titleExtraordinary magnetoresistance in semiconductor/metal hybrids: A reviewen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalMaterialsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorSun, Jianen
kaust.authorKosel, Jürgenen
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