Controlling the Er content of porous silicon using the doping current intensity

Handle URI:
http://hdl.handle.net/10754/334603
Title:
Controlling the Er content of porous silicon using the doping current intensity
Authors:
Mula, Guido; Loddo, Lucy; Pinna, Elisa; Tiddia, Maria V; Mascia, Michele; Palmas, Simonetta; Ruffilli, Roberta; Falqui, Andrea ( 0000-0002-1476-7742 )
Abstract:
The results of an investigation on the Er doping of porous silicon are presented. Electrochemical impedance spectroscopy, optical reflectivity, and spatially resolved energy dispersive spectroscopy (EDS) coupled to scanning electron microscopy measurements were used to investigate on the transient during the first stages of constant current Er doping. Depending on the applied current intensity, the voltage transient displays two very different behaviors, signature of two different chemical processes. The measurements show that, for equal transferred charge and identical porous silicon (PSi) layers, the applied current intensity also influences the final Er content. An interpretative model is proposed in order to describe the two distinct chemical processes. The results can be useful for a better control over the doping process.
KAUST Department:
Biological and Environmental Sciences and Engineering (BESE) Division
Citation:
Mula G, Loddo L, Pinna E, Tiddia MV, Mascia M, et al. (2014) Controlling the Er content of porous silicon using the doping current intensity. Nanoscale Research Letters 9: 332. doi:10.1186/1556-276X-9-332.
Publisher:
Springer
Journal:
Nanoscale Research Letters
Issue Date:
4-Jul-2014
DOI:
10.1186/1556-276X-9-332
PubMed ID:
25024691
PubMed Central ID:
PMC4090651
Type:
Article
ISSN:
1931-7573
Appears in Collections:
Articles; Biological and Environmental Sciences and Engineering (BESE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorMula, Guidoen
dc.contributor.authorLoddo, Lucyen
dc.contributor.authorPinna, Elisaen
dc.contributor.authorTiddia, Maria Ven
dc.contributor.authorMascia, Micheleen
dc.contributor.authorPalmas, Simonettaen
dc.contributor.authorRuffilli, Robertaen
dc.contributor.authorFalqui, Andreaen
dc.date.accessioned2014-11-11T14:31:38Z-
dc.date.available2014-11-11T14:31:38Z-
dc.date.issued2014-07-04en
dc.identifier.citationMula G, Loddo L, Pinna E, Tiddia MV, Mascia M, et al. (2014) Controlling the Er content of porous silicon using the doping current intensity. Nanoscale Research Letters 9: 332. doi:10.1186/1556-276X-9-332.en
dc.identifier.issn1931-7573en
dc.identifier.pmid25024691en
dc.identifier.doi10.1186/1556-276X-9-332en
dc.identifier.urihttp://hdl.handle.net/10754/334603en
dc.description.abstractThe results of an investigation on the Er doping of porous silicon are presented. Electrochemical impedance spectroscopy, optical reflectivity, and spatially resolved energy dispersive spectroscopy (EDS) coupled to scanning electron microscopy measurements were used to investigate on the transient during the first stages of constant current Er doping. Depending on the applied current intensity, the voltage transient displays two very different behaviors, signature of two different chemical processes. The measurements show that, for equal transferred charge and identical porous silicon (PSi) layers, the applied current intensity also influences the final Er content. An interpretative model is proposed in order to describe the two distinct chemical processes. The results can be useful for a better control over the doping process.en
dc.language.isoenen
dc.publisherSpringeren
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.titleControlling the Er content of porous silicon using the doping current intensityen
dc.typeArticleen
dc.contributor.departmentBiological and Environmental Sciences and Engineering (BESE) Divisionen
dc.identifier.journalNanoscale Research Lettersen
dc.identifier.pmcidPMC4090651en
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDipartimento di Fisica, Cittadella Universitaria di Monserrato, Università degli Studi di Cagliari, S.P. 8 km 0.7, Monserrato, Cagliari 09042, Italyen
dc.contributor.institutionDipartimento di Ingegneria Meccanica Chimica e dei Materiali, Università degli Studi di Cagliari, Piazza d’Armi, Cagliari 09123, Italyen
dc.contributor.institutionNanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, Genova 16163, Italyen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorFalqui, Andreaen

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