Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions

Handle URI:
http://hdl.handle.net/10754/334562
Title:
Novel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctions
Authors:
Tian, He; Tan, Zhen; Wu, Can; Wang, Xiaomu; Mohammad, Mohammad Ali; Xie, Dan; Yang, Yi; Wang, Jing; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Xu, Jun; Ren, Tian-Ling
Abstract:
Recently, two-dimensional materials such as molybdenum disulphide (MoS 2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V.s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Tian H, Tan Z, Wu C, Wang X, Mohammad MA, et al. (2014) Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions. Sci Rep 4: 5951. doi:10.1038/srep05951.
Publisher:
Nature Publishing Group
Journal:
Scientific Reports
Issue Date:
11-Aug-2014
DOI:
10.1038/srep05951
PubMed ID:
25109609
PubMed Central ID:
PMC4127518
Type:
Article
ISSN:
20452322
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorTian, Heen
dc.contributor.authorTan, Zhenen
dc.contributor.authorWu, Canen
dc.contributor.authorWang, Xiaomuen
dc.contributor.authorMohammad, Mohammad Alien
dc.contributor.authorXie, Danen
dc.contributor.authorYang, Yien
dc.contributor.authorWang, Jingen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorXu, Junen
dc.contributor.authorRen, Tian-Lingen
dc.date.accessioned2014-11-11T14:29:43Z-
dc.date.available2014-11-11T14:29:43Z-
dc.date.issued2014-08-11en
dc.identifier.citationTian H, Tan Z, Wu C, Wang X, Mohammad MA, et al. (2014) Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions. Sci Rep 4: 5951. doi:10.1038/srep05951.en
dc.identifier.issn20452322en
dc.identifier.pmid25109609en
dc.identifier.doi10.1038/srep05951en
dc.identifier.urihttp://hdl.handle.net/10754/334562en
dc.description.abstractRecently, two-dimensional materials such as molybdenum disulphide (MoS 2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm2/V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS2 are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the backgate (through 300 nm SiO2) voltage to modulate the graphene-MoS2 Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm2/V.s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics.en
dc.language.isoenen
dc.publisherNature Publishing Groupen
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.titleNovel field-effect schottky barrier transistors based on graphene-MoS 2 heterojunctionsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalScientific Reportsen
dc.identifier.pmcidPMC4127518en
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionInstitute of Microelectronics, Tsinghua University, Beijing 100084, Chinaen
dc.contributor.institutionTsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, Chinaen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorLi, Lain-Jongen

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