Solid argon as a possible substrate for quasi-freestanding silicene

Handle URI:
http://hdl.handle.net/10754/334547
Title:
Solid argon as a possible substrate for quasi-freestanding silicene
Authors:
Sattar, Shahid; Hoffmann, R.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
We study the structural and electronic properties of silicene on solid Ar(111) substrate using ab initio calculations. We demonstrate that due to weak interaction, quasi-freestanding silicene is realized in this system. The small binding energy of only meV per Si atom also indicates the possibility to separate silicene from the solid Ar(111) substrate. In addition, a band gap of 11 meV and a significant splitting of the energy levels due to spin-orbit coupling are observed. 2014 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Sattar S, Hoffmann R, Schwingenschlögl U (2014) Solid argon as a possible substrate for quasi-freestanding silicene. New Journal of Physics 16: 065001. doi:10.1088/1367-2630/16/6/065001.
Publisher:
IOP Publishing
Journal:
New Journal of Physics
Issue Date:
3-Jun-2014
DOI:
10.1088/1367-2630/16/6/065001
ARXIV:
arXiv:1406.6197
Type:
Article
ISSN:
13672630
Additional Links:
http://arxiv.org/abs/1406.6197
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSattar, Shahiden
dc.contributor.authorHoffmann, R.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2014-11-11T14:29:13Zen
dc.date.available2014-11-11T14:29:13Zen
dc.date.issued2014-06-03en
dc.identifier.citationSattar S, Hoffmann R, Schwingenschlögl U (2014) Solid argon as a possible substrate for quasi-freestanding silicene. New Journal of Physics 16: 065001. doi:10.1088/1367-2630/16/6/065001.en
dc.identifier.issn13672630en
dc.identifier.doi10.1088/1367-2630/16/6/065001en
dc.identifier.urihttp://hdl.handle.net/10754/334547en
dc.description.abstractWe study the structural and electronic properties of silicene on solid Ar(111) substrate using ab initio calculations. We demonstrate that due to weak interaction, quasi-freestanding silicene is realized in this system. The small binding energy of only meV per Si atom also indicates the possibility to separate silicene from the solid Ar(111) substrate. In addition, a band gap of 11 meV and a significant splitting of the energy levels due to spin-orbit coupling are observed. 2014 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.urlhttp://arxiv.org/abs/1406.6197en
dc.rightsContent from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.en
dc.rightsArchived with thanks to New Journal of Physicsen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectDFT calculationen
dc.subjectsiliceneen
dc.subjectsubstrateen
dc.subjectBinding energyen
dc.subjectElectronic propertiesen
dc.subjectAb initio calculationsen
dc.subjectSi atomsen
dc.subjectSiliceneen
dc.subjectSolid argonen
dc.subjectSpin-orbit couplingsen
dc.subjectStructural and electronic propertiesen
dc.subjectWeak interactionsen
dc.subjectSubstratesen
dc.titleSolid argon as a possible substrate for quasi-freestanding siliceneen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNew Journal of Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Chemistry and Chemical Biology, Cornell University, Baker Laboratory, Ithaca NY 14853-1301, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
dc.identifier.arxividarXiv:1406.6197en
kaust.authorSchwingenschlögl, Udoen
kaust.authorSattar, Shahiden
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