Effects of electrode material and configuration on the characteristics of planar resistive switching devices

Handle URI:
http://hdl.handle.net/10754/334540
Title:
Effects of electrode material and configuration on the characteristics of planar resistive switching devices
Authors:
Peng, H.Y.; Pu, L.; Wu, J.C.; Cha, Dong Kyu; Hong, J.H.; Lin, W.N.; Li, Yangyang ( 0000-0003-4469-0659 ) ; Ding, Junfeng; David, A.; Li, K.; Wu, Tao ( 0000-0003-0845-4827 )
Abstract:
We report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3 (STO) single crystals. Metals with different work functions (Ti and Pt) and their combinations are used to control the junction transport (either ohmic or Schottky-like). We find that the electric bias is effective in manipulating the concentration of oxygen vacancies at the metal/STO interface, influencing the RS characteristics. Furthermore, we show that the geometric shapes of electrodes (e.g., rectangular, circular, or triangular) affect the electric field distribution at the metal/oxide interface, thus plays an important role in RS. These systematic results suggest that electrode engineering should be deemed as a powerful approach toward controlling and improving the characteristics of RS memories. 2013 Author(s).
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab
Citation:
Peng HY, Pu L, Wu JC, Cha D, Hong JH, et al. (2013) Effects of electrode material and configuration on the characteristics of planar resistive switching devices. APL Materials 1: 052106. doi:10.1063/1.4827597.
Publisher:
AIP Publishing
Journal:
APL Materials
Issue Date:
13-Nov-2013
DOI:
10.1063/1.4827597
Type:
Article
ISSN:
2166532X
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorPeng, H.Y.en
dc.contributor.authorPu, L.en
dc.contributor.authorWu, J.C.en
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorHong, J.H.en
dc.contributor.authorLin, W.N.en
dc.contributor.authorLi, Yangyangen
dc.contributor.authorDing, Junfengen
dc.contributor.authorDavid, A.en
dc.contributor.authorLi, K.en
dc.contributor.authorWu, Taoen
dc.date.accessioned2014-11-11T14:28:59Zen
dc.date.available2014-11-11T14:28:59Zen
dc.date.issued2013-11-13en
dc.identifier.citationPeng HY, Pu L, Wu JC, Cha D, Hong JH, et al. (2013) Effects of electrode material and configuration on the characteristics of planar resistive switching devices. APL Materials 1: 052106. doi:10.1063/1.4827597.en
dc.identifier.issn2166532Xen
dc.identifier.doi10.1063/1.4827597en
dc.identifier.urihttp://hdl.handle.net/10754/334540en
dc.description.abstractWe report that electrode engineering, particularly tailoring the metal work function, measurement configuration and geometric shape, has significant effects on the bipolar resistive switching (RS) in lateral memory devices based on self-doped SrTiO3 (STO) single crystals. Metals with different work functions (Ti and Pt) and their combinations are used to control the junction transport (either ohmic or Schottky-like). We find that the electric bias is effective in manipulating the concentration of oxygen vacancies at the metal/STO interface, influencing the RS characteristics. Furthermore, we show that the geometric shapes of electrodes (e.g., rectangular, circular, or triangular) affect the electric field distribution at the metal/oxide interface, thus plays an important role in RS. These systematic results suggest that electrode engineering should be deemed as a powerful approach toward controlling and improving the characteristics of RS memories. 2013 Author(s).en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.titleEffects of electrode material and configuration on the characteristics of planar resistive switching devicesen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalAPL Materialsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singaporeen
dc.contributor.institutionAdvanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation, Kawasaki 212-8582, Japanen
dc.contributor.institutionKey Laboratory of Radiation Physics and Technology, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, Chinaen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorCha, Dong Kyuen
kaust.authorDing, Junfengen
kaust.authorWu, Taoen
kaust.authorHong, J. H.en
kaust.authorLi, Yangyangen
kaust.authorLi, K.en
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