Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures

Handle URI:
http://hdl.handle.net/10754/334533
Title:
Nonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructures
Authors:
Wu, S.; Luo, X.; Turner, S.; Peng, H.; Lin, W.; Ding, J.; David, A.; Wang, B.; Van, Tendeloo, G.; Wang, J.; Wu, Tao ( 0000-0003-0845-4827 )
Abstract:
Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the "unconventional"bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Wu S, Luo X, Turner S, Peng H, Lin W, et al. (2013) Nonvolatile Resistive Switching in Pt/laALO3/srTiO3 Heterostructures. Physical Review X 3. doi:10.1103/PhysRevX.3.041027.
Publisher:
American Physical Society
Journal:
Physical Review X
Issue Date:
12-Dec-2013
DOI:
10.1103/PhysRevX.3.041027
Type:
Article
ISSN:
21603308
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorWu, S.en
dc.contributor.authorLuo, X.en
dc.contributor.authorTurner, S.en
dc.contributor.authorPeng, H.en
dc.contributor.authorLin, W.en
dc.contributor.authorDing, J.en
dc.contributor.authorDavid, A.en
dc.contributor.authorWang, B.en
dc.contributor.authorVan, Tendeloo, G.en
dc.contributor.authorWang, J.en
dc.contributor.authorWu, Taoen
dc.date.accessioned2014-11-11T14:28:44Zen
dc.date.available2014-11-11T14:28:44Zen
dc.date.issued2013-12-12en
dc.identifier.citationWu S, Luo X, Turner S, Peng H, Lin W, et al. (2013) Nonvolatile Resistive Switching in Pt/laALO3/srTiO3 Heterostructures. Physical Review X 3. doi:10.1103/PhysRevX.3.041027.en
dc.identifier.issn21603308en
dc.identifier.doi10.1103/PhysRevX.3.041027en
dc.identifier.urihttp://hdl.handle.net/10754/334533en
dc.description.abstractResistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the "unconventional"bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.en
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.rightsPublished by the American Physical Society under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.en
dc.rightsArchived with thanks to Physical Review Xen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectBottom electrodesen
dc.subjectCharged oxygen vacanciesen
dc.subjectConducting layersen
dc.subjectHigh-resistance stateen
dc.subjectNon-volatile memory applicationen
dc.subjectOhmic characteristicsen
dc.subjectResistive switchingen
dc.subjectReversible transitionsen
dc.subjectDefectsen
dc.subjectInterface statesen
dc.subjectLanthanum alloysen
dc.subjectStrontium titanatesen
dc.subjectSwitching systemsen
dc.subjectHeterojunctionsen
dc.titleNonvolatile resistive switching in Pt/laALO3/srTiO3 heterostructuresen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalPhysical Review Xen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singaporeen
dc.contributor.institutionSchool of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singaporeen
dc.contributor.institutionState Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou, 510275, Chinaen
dc.contributor.institutionEMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgiumen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorDing, Junfengen
kaust.authorWu, Taoen
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