Hole mobility enhancement and p-doping in monolayer WSe2 by gold decoration

Handle URI:
http://hdl.handle.net/10754/333561
Title:
Hole mobility enhancement and p-doping in monolayer WSe2 by gold decoration
Authors:
Chen, Chang-Hsiao; Wu, Chun-Lan; Pu, Jiang; Chiu, Ming-Hui; Kumar, Pushpendra; Takenobu, Taishi; Li, Lain-Jong ( 0000-0002-4059-7783 )
Abstract:
Tungsten diselenide (WSe2) is an attractive transition metal dichalcogenide material, since its Fermi energy close to the mid gap makes it an excellent candidate for realizing p-n junction devices and complementary digital logic applications. Doping is one of the most important technologies for controlling the Fermi energy in semiconductors, including 2D materials. Here we present a simple, stable and controllable p-doping technique on a WSe2 monolayer, where a more p-typed WSe2 field effect transistor is realized by electron transfer from the WSe2 to the gold (Au) decorated on the WSe2 surfaces. Related changes in Raman spectroscopy are also reported. The p-doping caused by Au on WSe2 monolayers lowers the channel resistance by orders of magnitude. The effective hole mobility is ~100 (cm2/Vs) and the near ideal subthreshold swing of ~60 mV/decade and high on/off current ratio of >106 are observed. The Au deposited on the WSe2 also serves as a protection layer to prevent a reaction between the WSe2 and the environment, making the doping stable and promising for future scalable fabrication.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Hole mobility enhancement and p-doping in monolayer WSe2 by gold decoration Chang-Hsiao Chen et al 2014 2D Mater. 1 034001 doi:10.1088/2053-1583/1/3/034001
Publisher:
IOP Science
Journal:
2D Materials
Issue Date:
28-Oct-2014
DOI:
10.1088/2053-1583/1/3/034001
Type:
Article
ISSN:
2053-1583
Sponsors:
This research was supported by Academia Sinica, the National Science Council Taiwan, AFOSR BRI and KAUST. TT was partially supported by a Waseda University Grant (2011A- 501) and the Funding Program for the Next Generation 90 of World-Leading Researchers.
Additional Links:
http://stacks.iop.org/2053-1583/1/i=3/a=034001?key=crossref.0569a88dfb376568e675805a3d3d065a
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorChen, Chang-Hsiaoen
dc.contributor.authorWu, Chun-Lanen
dc.contributor.authorPu, Jiangen
dc.contributor.authorChiu, Ming-Huien
dc.contributor.authorKumar, Pushpendraen
dc.contributor.authorTakenobu, Taishien
dc.contributor.authorLi, Lain-Jongen
dc.date.accessioned2014-11-03T07:05:51Z-
dc.date.available2014-11-03T07:05:51Z-
dc.date.issued2014-10-28en
dc.identifier.citationHole mobility enhancement and p-doping in monolayer WSe2 by gold decoration Chang-Hsiao Chen et al 2014 2D Mater. 1 034001 doi:10.1088/2053-1583/1/3/034001en
dc.identifier.issn2053-1583en
dc.identifier.doi10.1088/2053-1583/1/3/034001en
dc.identifier.urihttp://hdl.handle.net/10754/333561en
dc.description.abstractTungsten diselenide (WSe2) is an attractive transition metal dichalcogenide material, since its Fermi energy close to the mid gap makes it an excellent candidate for realizing p-n junction devices and complementary digital logic applications. Doping is one of the most important technologies for controlling the Fermi energy in semiconductors, including 2D materials. Here we present a simple, stable and controllable p-doping technique on a WSe2 monolayer, where a more p-typed WSe2 field effect transistor is realized by electron transfer from the WSe2 to the gold (Au) decorated on the WSe2 surfaces. Related changes in Raman spectroscopy are also reported. The p-doping caused by Au on WSe2 monolayers lowers the channel resistance by orders of magnitude. The effective hole mobility is ~100 (cm2/Vs) and the near ideal subthreshold swing of ~60 mV/decade and high on/off current ratio of >106 are observed. The Au deposited on the WSe2 also serves as a protection layer to prevent a reaction between the WSe2 and the environment, making the doping stable and promising for future scalable fabrication.en
dc.description.sponsorshipThis research was supported by Academia Sinica, the National Science Council Taiwan, AFOSR BRI and KAUST. TT was partially supported by a Waseda University Grant (2011A- 501) and the Funding Program for the Next Generation 90 of World-Leading Researchers.en
dc.language.isoenen
dc.publisherIOP Scienceen
dc.relation.urlhttp://stacks.iop.org/2053-1583/1/i=3/a=034001?key=crossref.0569a88dfb376568e675805a3d3d065aen
dc.rightsContent from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.en
dc.rightsArchived with thanks to 2D Materialsen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0en
dc.subjectElectronics and devicesen
dc.subjectCondensed matter: electrical, magnetic and opticalen
dc.subjectSemiconductorsen
dc.subjectSurfaces, interfaces and thin filmsen
dc.titleHole mobility enhancement and p-doping in monolayer WSe2 by gold decorationen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journal2D Materialsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionInstitute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 11529, Taiwanen
dc.contributor.institutionCenter for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwanen
dc.contributor.institutionDepartment of Applied Physics, Waseda University, Tokyo 169-8555, Japanen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorLi, Lain-Jongen
kaust.authorChiu, Ming-Huien
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