Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility

Handle URI:
http://hdl.handle.net/10754/325431
Title:
Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility
Authors:
Caraveo-Frescas, J. A.; Khan, M. A.; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm 2V-1s-1, large memory window (~16 V), low read voltages (~-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Functional Nanomaterials and Devices Research Group; Materials Science and Engineering Program
Citation:
Caraveo-Frescas JA, Khan MA, Alshareef HN (2014) Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility. Sci Rep 4. doi:10.1038/srep05243.
Publisher:
Nature Publishing Group
Journal:
Scientific Reports
Issue Date:
10-Jun-2014
DOI:
10.1038/srep05243
PubMed ID:
24912617
PubMed Central ID:
PMC4050383
Type:
Article
ISSN:
20452322
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Functional Nanomaterials & Devices; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorCaraveo-Frescas, J. A.en
dc.contributor.authorKhan, M. A.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2014-08-27T09:51:04Z-
dc.date.available2014-08-27T09:51:04Z-
dc.date.issued2014-06-10en
dc.identifier.citationCaraveo-Frescas JA, Khan MA, Alshareef HN (2014) Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility. Sci Rep 4. doi:10.1038/srep05243.en
dc.identifier.issn20452322en
dc.identifier.pmid24912617en
dc.identifier.doi10.1038/srep05243en
dc.identifier.urihttp://hdl.handle.net/10754/325431en
dc.description.abstractHere we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm 2V-1s-1, large memory window (~16 V), low read voltages (~-1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.en
dc.language.isoenen
dc.publisherNature Publishing Groupen
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivs 3.0 Unported license. The images in this article are included in the article's Creative Commons license, unless indicated otherwise in the image credit; if the image is not included under the Creative Commons license, users will need to obtain permission from the license holder in order to reproduce the image. To view a copy of this license, visit http://creativecommons.org/licenses/by-nc-nd/3.0/en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/en
dc.titlePolymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobilityen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalScientific Reportsen
dc.identifier.pmcidPMC4050383en
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionUnidad Académica de Sistemas Arrecifales (Puerto Morelos), Instituto de Ciencias Del Mar y Limnología, Universidad Nacional Autõnoma de México, Puerto Morelos, QR 77580, Mexicoen
dc.contributor.institutionSchool of Natural Sciences, University of California Merced, 5200 North Lake Road, Merced, CA 95343, United Statesen
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorCaraveo-Frescas, Jesus Alfonsoen
kaust.authorAlshareef, Husam N.en
kaust.authorKhan, Mohammad A.en

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