Memristor Multiport Readout: A Closed-Form Solution for Sneak Paths

Handle URI:
http://hdl.handle.net/10754/321911
Title:
Memristor Multiport Readout: A Closed-Form Solution for Sneak Paths
Authors:
Zidan, Mohammed A. ( 0000-0003-3843-814X ) ; Eltawil, Ahmed M.; Fahmy, Hossam A.H.; Kurdahi, Fadi; Salama, Khaled N. ( 0000-0001-7742-1282 )
Abstract:
In this paper, we introduce for the first time, a closed-form solution for the memristor-based memory sneak paths without using any gating elements. The introduced technique fully eliminates the effect of sneak paths by reading the stored data using multiple access points and evaluating a simple addition/subtraction on the different readings. The new method requires fewer reading steps compared to previously reported techniques, and has a very small impact on the memory density. To verify the underlying theory, the proposed system is simulated using Synopsys HSPICE showing the ability to achieve a 100% sneak-path error-free memory. In addition, the effect of quantization bits on the system performance is studied.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Sensors Lab
Citation:
Zidan MA, Eltawil AM, Kurdahi F, Fahmy HAH, Salama KN (2014) Memristor Multiport Readout: A Closed-Form Solution for Sneak Paths. IEEE Transactions on Nanotechnology 13: 274-282. doi:10.1109/TNANO.2014.2299558.
Publisher:
Institute of Electrical and Electronics Engineers
Journal:
IEEE Transactions on Nanotechnology
Issue Date:
18-Jun-2014
DOI:
10.1109/TNANO.2014.2299558
Type:
Article
ISSN:
1536-125X; 1941-0085
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6709781
Appears in Collections:
Articles; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZidan, Mohammed A.en
dc.contributor.authorEltawil, Ahmed M.en
dc.contributor.authorFahmy, Hossam A.H.en
dc.contributor.authorKurdahi, Fadien
dc.contributor.authorSalama, Khaled N.en
dc.date.accessioned2014-06-18T18:30:49Z-
dc.date.available2014-06-18T18:30:49Z-
dc.date.issued2014-06-18en
dc.identifier.citationZidan MA, Eltawil AM, Kurdahi F, Fahmy HAH, Salama KN (2014) Memristor Multiport Readout: A Closed-Form Solution for Sneak Paths. IEEE Transactions on Nanotechnology 13: 274-282. doi:10.1109/TNANO.2014.2299558.en
dc.identifier.issn1536-125Xen
dc.identifier.issn1941-0085en
dc.identifier.doi10.1109/TNANO.2014.2299558en
dc.identifier.urihttp://hdl.handle.net/10754/321911en
dc.description.abstractIn this paper, we introduce for the first time, a closed-form solution for the memristor-based memory sneak paths without using any gating elements. The introduced technique fully eliminates the effect of sneak paths by reading the stored data using multiple access points and evaluating a simple addition/subtraction on the different readings. The new method requires fewer reading steps compared to previously reported techniques, and has a very small impact on the memory density. To verify the underlying theory, the proposed system is simulated using Synopsys HSPICE showing the ability to achieve a 100% sneak-path error-free memory. In addition, the effect of quantization bits on the system performance is studied.en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6709781en
dc.rightsArchived with thanks to IEEE Transactions on Nanotechnologyen
dc.subjectsneak pathen
dc.subjectcrossbaren
dc.subjectmemoryen
dc.subjectmemristoren
dc.titleMemristor Multiport Readout: A Closed-Form Solution for Sneak Pathsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentSensors Laben
dc.identifier.journalIEEE Transactions on Nanotechnologyen
dc.eprint.versionPre-printen
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of California, Irvine, CA 92617, United Statesen
dc.contributor.institutionDepartment of Electronics and Communication, Faculty of Engineering, Cairo University, Giza 12316, Egypten
dc.contributor.affiliationKing Abdullah University of Science and Technology (KAUST)en
kaust.authorZidan, Mohammed A.en
kaust.authorSalama, Khaled N.en
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